| CHEN Wen-ge,ZHANG Jian,XIONG Fei,SHAO Fe.Research on W-Cu Film by Magnetron Sputtering Technology[J],(4):42-45 |
| Research on W-Cu Film by Magnetron Sputtering Technology |
| Received:April 14, 2012 Revised:August 20, 2012 |
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| DOI： |
| KeyWord:W-Cu film magnetron sputtering single-target dual-target |
| Author | Institution |
| CHEN Wen-ge |
School of Materials Science and Engineering, Xi'an University of Technology, Xi'an , China |
| ZHANG Jian |
School of Materials Science and Engineering, Xi'an University of Technology, Xi'an , China |
| XIONG Fei |
School of Materials Science and Engineering, Xi'an University of Technology, Xi'an , China |
| SHAO Fe |
School of Materials Science and Engineering, Xi'an University of Technology, Xi'an , China |
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| Abstract: |
| W-Cu films were prepared on a variety of substrate by single target magnetron sputtering of W70Cu30 and pure W, pure Cu dual-target magnetron co-sputtering two processes.The results show that when use the single target magnetron sputtering, the control target voltage is 520 V, sputtering current is 0.8~1.2 A, the gas flow of Ar is 25mL/min(standard state), the W-Cu film can be plated on a glass substrate. The annealing temperature is too high can also increase W and Cu atom segregation. With dual-target magnetron co-sputtering, the control Ar gas flow rate is 20 mL/min(standard state), Cu target current is 0.7 A, W target current is 1.2 A, sputtering time is 3600 s, W-Cu thin films are plated on the silicon and glass substrates, but the result is not ideal in the coating on the graphite matrix, ce-ramic matrix, and 45 steel substrate. |
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