| WNAG Wen-qi,ZHU Chang.The Development and Application of Hall No Gate Ion Source[J],(2):58-60 |
| The Development and Application of Hall No Gate Ion Source |
| Received:December 06, 2011 Revised:April 20, 2012 |
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| DOI： |
| KeyWord:hall no gate ion source IBAD optical thin-film |
| Author | Institution |
| WNAG Wen-qi |
North Institute of Information Engineering, Xi'an Technological University, Xi'an , China |
| ZHU Chang |
North Institute of Information Engineering, Xi'an Technological University, Xi'an , China |
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| Abstract: |
| Based on ion-beam assisted deposition technique, new type of Hall of independent non-grid ion source was developed, takeing advantage of the ion source, a variety of optical thin films were coated on the glass substrate with ion beam assisted deposition method. By various testing of the optical properties of thin films it shows that the coating strength, adhesion, corrosion resistance and opticalpro perties of the thin films prepared by Hall no gate ion source has significantly improved than prepared by the conventional thermal evaporation process. |
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