| ZHU Chun-yan,WANG Wen-qi,XI Hua.Reactive Magnetron Sputtering Method for Deposition of Silicon Oxide Thin Films[J],39(4):8-10 |
| Reactive Magnetron Sputtering Method for Deposition of Silicon Oxide Thin Films |
| Revised:August 10, 2010 |
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| DOI： |
| KeyWord:reactive magnetron method silicon oxide thin films optical characteristic |
| Author | Institution |
| ZHU Chun-yan |
Xi'an Technological University North Institute of Information Engineering, Xi'an , China |
| WANG Wen-qi |
Xi'an Technological University North Institute of Information Engineering, Xi'an , China |
| XI Hua |
Xi'an Technological University North Institute of Information Engineering, Xi'an , China |
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| Abstract: |
| Optical characteristic of silicon oxide thin films deposited by the reactive magnetron method have been compared to those deposited by the reactive ion-beam sputtering method. Dependences of refractive index and deposition rate on oxygen concentration in Ar/O2working gas mixture were determined. By the reactive magnetron method at O2 content in working gas mixture more than 15% were deposited silicon oxide films with refractive index 1.50 on the wavelength 630 nm.In case of the the reactive magnetron the SiO2film deposition rate decreases when the process is switched to the reactive mode. Comparison of two kinds of thin film deposition method was determined, choose the reactive magnetron method for industrial formation of the oxide silicon thin films. |
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