| HUANG Xiao-ying,LI Yu-hai,TONG Xin,CHENG Shi-nan.Study on the Eletcroless Copper Plating on SiC Particle[J],37(6):41-43 |
| Study on the Eletcroless Copper Plating on SiC Particle |
| Received:October 06, 2008 Revised:December 10, 2008 |
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| DOI： |
| KeyWord:Eletcroless plating copper Deposition rate SiC particle |
| Author | Institution |
| HUANG Xiao-ying |
School of Materials Science and Engineering, Shenyang Ligong University, Shengyang , China |
| LI Yu-hai |
School of Materials Science and Engineering, Shenyang Ligong University, Shengyang , China |
| TONG Xin |
School of Materials Science and Engineering, Shenyang Ligong University, Shengyang , China |
| CHENG Shi-nan |
School of Materials Science and Engineering, Shenyang Ligong University, Shengyang , China |
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| Abstract: |
| In order to improve the wettability between SiC and Al, plating copper on 40μm SiC particles was made by electroless copper plating. And factors affecting deposition rate of electroless plating copper were investigated. SEM was employed to observe surface topography, and the value of the factors were determined when plating effect was best. The effects of stimng and the state of dissolved EDTA on plating results were analyzed. The result shows that deposition rate increases with the increasing of temperature, load capacity, formaldehyde and NaOH, and then decreases with further increasing of them. When the deposition rate is the fastest, the plating result is the best too. More CuS04 leads to higher deposition rate, When CuS04 is 7g/L, EDTA is 14g/L, stabilizer is 30mg/L, plating result is the best. Stimng can mcrease deposition rate, get better plating results; Not completely dissolved EDTA will reduce deposition rate and make bad effect on plating results. |
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