YIN Chen,CHEN Chang-an,ZHANG Peng-cheng.Research of Al-AI203 Resisting Hydrogen Cmposite Films Prepared by PECVD[J],37(3):41-43,48 |
Research of Al-AI203 Resisting Hydrogen Cmposite Films Prepared by PECVD |
Received:April 03, 2008 Revised:June 10, 2008 |
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KeyWord:PECVD Composite films PRF Al-Al203 |
Author | Institution |
YIN Chen |
State key Laboratory of Surface Physics and Chemistry, Mianyang , China |
CHEN Chang-an |
State key Laboratory of Surface Physics and Chemistry, Mianyang , China |
ZHANG Peng-cheng |
State key Laboratory of Surface Physics and Chemistry, Mianyang , China |
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Abstract: |
For the sake ofimproving hydrogen resistance property of stainless steel, Al film was prepared on surface of stainless steel by plasma enhanced chemical vapor deposition, Al-Al203 composite films were obtained by vacuum thermal oxidation(480℃ ) . The films surface morphologies, phase structures, composition and elements chemical valence were all analyzed by SEM,XRD,EDS and XPS surface analysis methods. Whereafter its deuterium resistance property was researched. Results indicate that the composite films are uniformity and smooth and compact, under 350℃ , deuterium resistance property is perfect, even no penetration; between 350℃ and 450℃ , PRF can reach 250; but penetration is very distinct over 450℃ . |
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