LIU Si-yong,LIN Li,YANG Wu-bao,SUN Hui-feng.Technology Optimization of Reactive Ion Plating for AIN Film and Its Analysis[J],36(3):37-39
Technology Optimization of Reactive Ion Plating for AIN Film and Its Analysis
Received:March 05, 2007  Revised:June 10, 2007
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KeyWord:AIN  Film  Reactive ion plating  Technology optimization
           
AuthorInstitution
LIU Si-yong Material Department of Electromechanical and Engineering College ,China University of Petroleum Beijing , Beijing , China
LIN Li Material Department of Electromechanical and Engineering College ,China University of Petroleum Beijing , Beijing , China
YANG Wu-bao Material Department of Electromechanical and Engineering College ,China University of Petroleum Beijing , Beijing , China
SUN Hui-feng Material Department of Electromechanical and Engineering College ,China University of Petroleum Beijing , Beijing , China
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Abstract:
      AIN film was produced on glass with high-pure N2 and Al by reactive ion plating. The result of orthogonal design indicates that the largest deposited speed is about 0. 8lym/min , its technology parameters are like this : the evaporating voltage is 225V, the bombarding voltage is 70V, the vacuum degree is l. 2 x 10-2torr. The film was analyzed by XRD, AFM, near infrared spectrum, and Raman spectrum, which ensured the AIN films presence.
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