| WANG Tong,XU Junqi,LI Yang,SU Junhong,SUN Shaobin,LIU Zheng.Design and Preparation of Anti-reflection Laser Films on Chalcogenide Glass Substrate[J],53(12):252-259 |
| Design and Preparation of Anti-reflection Laser Films on Chalcogenide Glass Substrate |
| Received:June 27, 2023 Revised:September 23, 2023 |
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| DOI：10.16490/j.cnki.issn.1001-3660.2024.12.021 |
| KeyWord:chalcogenide glass anti-reflection film adhesion infrared laser damage threshold |
| Author | Institution |
| WANG Tong |
Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi'an Technological University, Xi'an , China |
| XU Junqi |
Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi'an Technological University, Xi'an , China |
| LI Yang |
Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi'an Technological University, Xi'an , China |
| SU Junhong |
Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi'an Technological University, Xi'an , China |
| SUN Shaobin |
Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi'an Technological University, Xi'an , China |
| LIU Zheng |
Joint Laboratory of Advanced Optical Manufacturing Technology, Xi'an Institute of Optics and Precision Mechanics of CAS, Xi'an , China |
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| Abstract: |
| With the development of infrared technology, chalcogenide glass has been used as an infrared optical element to a certain extent, but the transmittance of chalcogenide glass in the 3-5 μm band can not meet the requirements of use, and the infrared thin film for detectors is easily damaged by strong laser irradiation. In order to solve the problems that the optical film plated on chalcogenide glass (As40Se60) substrate is easy to fall off, the transmittance is low, and the laser resistance is poor, the work aims to design and prepare a thin film with good transmittance in the 3-5 μm band and laser resistance at 1 064 nm. The optical constants of ZnSe, ZnS and YbF3 monolayer films were deposited and measured by ion beam-assisted thermal evaporation technology, and the ZnSe film materials were used as the transition layer between the film-groups to improve the film adhesion, and the film system design of infrared anti-reflection laser films was carried out by combining ZnS and YbF3 film materials. The optical constant measured by the above-mentioned single-layer film was input into the TFCalc film design software, and the infrared film with anti-reflection function in the 3-5 μm band and high reflection function at 1 064 nm was optimized on the As40Se60 glass substrate through TFCalc software. The film structure was S | 0.61H0.21L0.32M0.26L0.2M0.32L0.28M0.17L0.35M0.28L0.13M0.61L|A, of which H represented ZnSe material, M represented ZnS material, L represented YbF3 material, S represented chalcogenide glass and A represented air, and the design wavelength of the film system was 4 000 nm. The thin film layer thickness was 2 055 nm and the theoretical design spectral performance of the film was as follows:the average transmittance of double-sided coating samples in the range of 3-5 μm was 95.67%, the peak transmittance was 99.11%, and the average transmittance of single-sided coating samples in the range of (1 064±40) nm was 7.62%. The preparation of thin films was carried out by ion beam-assisted thermal evaporation technology, and the process parameters were optimized from the large difference in thermal expansion coefficient between chalcogenized glass and film materials. The optimized process parameters were:baking temperature of 70 ℃, ion energy of 100 eV, ion beam of 20 mA. Under these parameters, the residual stress of the thin film sample was −30.0 MPa and Zygo laser interferometer was used to test the surface shape before and after coating. The adhesion performance of the prepared film met the requirements. The average transmittance of the film was 95.38% and the peak transmittance was 99.07% when the film was coated on both sides in the 3-5 μm band. The average transmittance was 4.46% when the film was coated on one side in the range of (1 064±40) nm, and the laser damage threshold at 1 064 nm was 7.6 J/cm2. When a film is prepared on the chalcogenide glass substrate, starting from the difference in the thermal expansion coefficient between the glass itself and the film material, the process parameters such as baking temperature and ion parameters can be reasonably optimized, which can reduce the residual stress of the film and improve the adhesion performance of the film on the chalcogenide glass substrate. |
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