| ZHANG Qing,WENG Jun,LIU Fan,LI Ting-yang,WANG Jian-hua,XIONG Li-wei,ZHAO Hong-yang.Effect of High Microwave Power Plasma on the Homogeneous Epitaxy Growth of Single Crystal Diamond[J],51(6):364-373, 398 |
| Effect of High Microwave Power Plasma on the Homogeneous Epitaxy Growth of Single Crystal Diamond |
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| DOI：10.16490/j.cnki.issn.1001-3660.2022.06.035 |
| KeyWord:single crystal diamond microwave plasma chemical vapor deposition high microwave power high growth rate |
| Author | Institution |
| ZHANG Qing |
Wuhan Institute of Technology, Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan , China |
| WENG Jun |
Wuhan Institute of Technology, Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan , China |
| LIU Fan |
Wuhan Institute of Technology, Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan , China |
| LI Ting-yang |
Wuhan Institute of Technology, Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan , China |
| WANG Jian-hua |
Wuhan Institute of Technology, Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan , China |
| XIONG Li-wei |
Wuhan Institute of Technology, Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan , China |
| ZHAO Hong-yang |
Wuhan Institute of Technology, Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan , China |
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| Abstract: |
| The effect of a high-power microwave plasma environment on the epitaxial growth layer of single crystal diamond is investigated to optimize the plasma environment for the mass growth of single crystal diamond. The effects of methane concentration, microwave power, and substrate temperature on the epitaxial growth layer of single crystal diamond in a high-power plasma environment are investigated using a self-developed 915 MHz-MPCVD device by the laboratory under the conditions of 20-35 kW high-power microwave feeding. Such advanced equipment as optical microscope, laser Raman spectrum, and photoluminescence spectrum are used to characterize the morphology and quality of the grown single crystal diamond, and the plasma emission spectrum is used to diagnose the high-power microwave plasma environment in which the diamond is grown. The results show that decreasing the methane concentration from 6% to 3% in a plasma environment with microwave power of 25 kW can make the deposited single crystal diamond more prone to layered growth structure in the presence of a 25 kW microwave source. Increases in methane concentration result in a significant decrease in the offset between the peak position of the diamond characteristic peak and the value of 1 332 cm–1, as well as a reduction in the compressive stress of the diamond, as well as a shift of the diamond characteristic peak to a low wave number. Increased microwave power from 25 kW to 35 kW when methane concentration is maintained at 3% results in the development of a layered growth morphology with complete structure, regular structure, and uniform step spacing on the growth surface of single crystal diamond. This results is an improvement in the growth quality and growth rate of single crystal diamond because increasing the power can promote more carbon containing active groups conducive to diamond growth. The intensity of the diamond impurity peak decreases gradually as the methane concentration is reduced and the microwave power is increased, demonstrating that it is capable of effectively inhibiting the formation of impurity defects in single crystal diamond and improving the epitaxial quality of single crystal diamond. The temperature of the substrate can be increased from 800 ℃ to 1 210 ℃ when the microwave power is 35 kW and the methane concentration is 3%. This can significantly improve the growth rate of single crystal diamond, but it will be easy to introduce non diamond phase. When the microwave power is 35 kW, the methane concentration is 3%, and the substrate temperature is 950 ℃, the growth rate of single crystal diamond can reach 25.6 μm/h, and the quality and color of single crystal diamond are improved, the growth rate of single crystal diamond can reach 25.6 μm/h. The following are the findings and conclusions:It has been demonstrated that, even in the presence of low methane concentrations, carbon containing groups can be effectively activated by increasing microwave power by a factor of ten, and that active groups conducive to the high-quality and high-speed growth of single crystal diamond can be produced in the plasma. In single crystal diamond, the temperature of the substrate has a significant impact on the non-diamond phase and color of the diamond. The proper use of a microwave power of 35 kW and a methane concentration of 3% can effectively inhibit the formation of the non diamond phase when the substrate temperature is about 950 ℃. |
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