QU Shuai-jie,GUO Chao-qian,DAI Ming-jiang,YANG Zhao,LIN Song-sheng,WANG Di,TIAN Tian,SHI Qian.Research Progress of Plasma Parameter Characterization in Physical Vapor Deposition[J],50(10):140-146, 185 |
Research Progress of Plasma Parameter Characterization in Physical Vapor Deposition |
Received:December 10, 2020 Revised:February 24, 2021 |
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DOI:10.16490/j.cnki.issn.1001-3660.2021.10.012 |
KeyWord:physical vapor deposition thin film plasma parameters arc ion plating magnetron sputtering emission spectroscopy Langmuir probe |
Author | Institution |
QU Shuai-jie |
School of Materials Science and Engineering, Central South University, Changsha , China;Guangdong Provincial Key Laboratory of Modern Surface Engineering Technology, National Engineering Laboratory of Modern Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou , China |
GUO Chao-qian |
Guangdong Provincial Key Laboratory of Modern Surface Engineering Technology, National Engineering Laboratory of Modern Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou , China |
DAI Ming-jiang |
Guangdong Provincial Key Laboratory of Modern Surface Engineering Technology, National Engineering Laboratory of Modern Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou , China |
YANG Zhao |
School of Materials Science and Engineering, Central South University, Changsha , China |
LIN Song-sheng |
Guangdong Provincial Key Laboratory of Modern Surface Engineering Technology, National Engineering Laboratory of Modern Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou , China |
WANG Di |
Guangdong Provincial Key Laboratory of Modern Surface Engineering Technology, National Engineering Laboratory of Modern Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou , China |
TIAN Tian |
School of Materials Science and Engineering, Central South University, Changsha , China;Guangdong Provincial Key Laboratory of Modern Surface Engineering Technology, National Engineering Laboratory of Modern Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou , China |
SHI Qian |
Guangdong Provincial Key Laboratory of Modern Surface Engineering Technology, National Engineering Laboratory of Modern Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou , China |
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Abstract: |
As an important method for preparing surface protective films, physical vapor deposition is always the research focus in the field of surface films. Plasma in physical vapor deposition is a key factor that directly affects the performance of films. The characterization of its parameters has important guiding significance for optimizing the deposition process and improving the performance of films. The paper summaries the common physical vapor deposition methods and their development, including the principle and development process of arc ion plating, magnetron sputtering and arc magnetic control composite technology and generalizes the commonly used characterization methods of plasma parameters in current production, including Langmuir probe method, Thomson scattering method, microwave interference method and emission spectrum method, of which the principle for diagnosing plasma parameters is expounded and the advantages and disadvantages and the main problems are analyzed. The development and current situation of plasma parameter characterization in common physical vapor deposition are summarized, and the development and recent research of plasma parameter diagnosis in arc ion plating and magnetron sputtering are sorted out. Langmuir probe method and the emission spectrum method are the most commonly used methods for plasma parameter characterization of physical vapor deposition. Early studies focused on exploring the relationship between plasma transient parameters and the structural properties of thin films.. With the progress of modern technology, the early diagnosis methods are constantly integrated with new technologies, and the research direction is also gradually inclined to study the time variation of plasma parameters and optimizes thin-film processing and performance evaluation methods. Finally, the paper analyzes problems and shortcomings of plasma parameters characterization in physical vapor deposition and prospects the future research trend of plasma parameters. |
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