| WU Bao-hua,LENG Yong-xiang,HUANG Nan,YANG Wen-mao,LI Xue-yuan.The Plasma Characteristics in High Power Pulsed Impulsed Magnetron Sputtering (HiPIMS) and Its Effect on Films Properties[J],47(5):245-255 |
| The Plasma Characteristics in High Power Pulsed Impulsed Magnetron Sputtering (HiPIMS) and Its Effect on Films Properties |
| Received:October 30, 2017 Revised:May 20, 2018 |
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| DOI：10.16490/j.cnki.issn.1001-3660.2018.05.038 |
| KeyWord:high power pulsed magnetron sputtering ionization rate films properties plasma microstructure |
| Author | Institution |
| WU Bao-hua |
Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu , China |
| LENG Yong-xiang |
Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu , China |
| HUANG Nan |
Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu , China |
| YANG Wen-mao |
Institute of Machinery Manufacturing Technology, China Academy of Engineering Physics, Mianyang , China |
| LI Xue-yuan |
Institute of Machinery Manufacturing Technology, China Academy of Engineering Physics, Mianyang , China |
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| Abstract: |
| As a new member of ionized physical vapor deposition (I-PVD) family, high power pulsed magnetron sputtering (HPPMS/HiPIMS) technology has drawn much attention from experts at home and abroad after being discovered due to highelectron density and metal ionization rate. Ionization mechanism and definition of ionization rate of the technology were summarized from the perspective of metal ionization rate in the process of high power pulsed magnetron sputtering. On this basis, measuring methods of ionization rate which were commonly used in recent years were reviewed, including plasma emission spectrometry, atomic absorption spectrometry, mass spectrometry, multi-gridquartz crystal microbalance, and deposition with positive bias voltage. Advantages and disadvantages of each method were compared. Furthermore, key factors affecting ionization rate were summarized, such aselectrical parameters including target power, pulse width, frequency, duty cycle and peak current, as well as non-electrical parameters including target materials, gas pressure and magnetic field. Finally, the effects of ionization rate on properties of films were reviewed. The effects of ionization rate on microstructure, oblique incidence deposition and homogeneity of the filmswere discussed in detail. The work aims to provide reference for better controllingand optimizing ion characteristics during sputtering and theoretical basis for preparing high-quality films. |
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