| HE Shuang-ci,ZHONG Zhi-cheng,WEI Yan-feng,WANG Jing-yang.Preparation and Opto-Electrical Properties of Co-sputtered AZO Thin Films[J],47(5):233-238 |
| Preparation and Opto-Electrical Properties of Co-sputtered AZO Thin Films |
| Received:October 31, 2017 Revised:May 20, 2018 |
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| DOI：10.16490/j.cnki.issn.1001-3660.2018.05.036 |
| KeyWord:AZO thin films co-sputtered sputtering power photoelectric properties |
| Author | Institution |
| HE Shuang-ci |
1.School of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan , China;2.School of Physics and Electronic Engineering, Hubei University of Arts and Science, Xiangyang , China |
| ZHONG Zhi-cheng |
School of Physics and Electronic Engineering, Hubei University of Arts and Science, Xiangyang , China |
| WEI Yan-feng |
School of Physics and Electronic Engineering, Hubei University of Arts and Science, Xiangyang , China |
| WANG Jing-yang |
School of Physics and Electronic Engineering, Hubei University of Arts and Science, Xiangyang , China |
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| Abstract: |
| The work aims to study the effect of Al DC sputtering power on opto-electrical properties of Al thin films mixed with ZnO (AZO). The metal Al and ceramics ZnO were used as target materials. DC and RF magnetron sputtering method was adopted to prepare AZO thin film on the glass substrate. The structure and properties of AZO thin films were studied by changing Al DC sputtering power. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), ultraviolet spectrophotometer (UV-Vis) and four-point probe meter were adopted to analyze and characterize the microstructure and opto-electrical properties of thin films. The prepared AZO thin films had hexagonal wurtzite structure oriented to axis C. The average optical transmittance of all thin films was over 90％ in visible range. All the AZO thin films presented blue shift at absorption edge when compared with intrinsic ZnO thin films. When the DC sputtering power of Al was 18 W, the lowest resistivity of AZO thin films was 2.49×103 Ω•cm and the corresponding quality factor was 370.2 S/cm. Therefore, the DC sputtering power of Al strongly affects the opto-electrical properties of AZO thin films and the properties of AZO thin films prepared when the sputtering power is 18 W was the best. |
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