| LIU Shao-yu,ZHU Wei.Preparation and Photoelectric Properties of Zn-doped CdO Films by Sputtering[J],46(10):72-75 |
| Preparation and Photoelectric Properties of Zn-doped CdO Films by Sputtering |
| Received:May 15, 2017 Revised:October 20, 2017 |
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| DOI：10.16490/j.cnki.issn.1001-3660.2017.10.010 |
| KeyWord:ZnO CdO film RF magnetron sputtering Hall effect absorption edge |
| Author | Institution |
| LIU Shao-yu |
Center for Physical Experiments, School of Physics Science, University of Science and Technology of China, Hefei , China |
| ZHU Wei |
Center for Physical Experiments, School of Physics Science, University of Science and Technology of China, Hefei , China |
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| Abstract: |
| The work aims to expand forbidden bandwidth and improve performance of CdO film by doping ZnO to it without affecting its electrical property. A series of Cd1-xZnxO transparent conductive films were deposited on glass substrate and silicon <111> substrate by adopting RF magnetron sputtering. Structure, optical and electrical properties of the films were tested by using XRD, UV spectrophotometer and Hall effect measuring instrument. The structure of films turned to 3 phases as the Zn doping content increased: RS (rock salt) phase if x<0.25, mixed phase if 0.25 |
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