| XIONG Li-wei,PENG Huan-yang,WANG Jian-hua,CUI Xiao-hui,GONG Guo-hua.Research Progress in Preparation of Boron Doped Nanocrystalline Diamond Films by PECVD Method[J],45(10):40-48 |
| Research Progress in Preparation of Boron Doped Nanocrystalline Diamond Films by PECVD Method |
| Received:February 29, 2016 Revised:October 20, 2016 |
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| DOI：10.16490/j.cnki.issn.1001-3660.2016.10.007 |
| KeyWord:boron doping NCD film electrical properties B concentration substrate temperature |
| Author | Institution |
| XIONG Li-wei |
School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan , China |
| PENG Huan-yang |
School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan , China |
| WANG Jian-hua |
School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan , China |
| CUI Xiao-hui |
School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan , China |
| GONG Guo-hua |
School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan , China |
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| Abstract: |
| First the excellent performance of diamond as a semiconductor material was introduced in detail in this work, then advantages of B-doped NCD thin films as semiconductor materials were discussed from the point of application. Finally major technological conditions (electrical property, optical property, biological properties, etc.) affecting NCD thin film performance (including source category of Boron, concentration of Boron doping, substrate temperature and aftertreatment) were elaborated. Researches found that liquid and gaseous boron source were used by most researchers. However, solid boron source was seldom used due to difficulty in liquefaction and concentration control. Electrical resistivity of NCD thin films decreased sharply after being doped with B, ultraviolet transmittance could be up to 51% and the magnetoresistance effect became better. In addition, the substrate temperature had effects on both quality and performance of BD-NCD film. Amorphous carbon content increased and quality of diamond decreased if the substrate temperature was too high; effective boron atoms capable of entering NCD grain boundary or grain decreased if the substrate temperature was too low. Both electric properties and optical properties were influenced. Conductivity at optimal substrate temperature could be up to 22.3 S/cm and the electrochemical window could be up to 3.3 V in the aspect of electrochemical properties. The selection of appropriate boron source concentration was crucial for electrical properties, optical properties and biological properties of BD-NCD. If B source concentration was too high, the surface roughness and grain size of BD-NCD increased; if B concentration was too small, the hole produced conductive B atoms decreased. Under suitable boron concentration conditions, the carrier concentration could be 1021 cm-3 and refractive index 2.45. Some researchers applied postprocessing technology (annealing and plasma treatment) to BD-NCD films and found it had some effects on the electric properties. Therefore, selection of an appropriate technology was of great importance to NCD films of high growth quality and excellent performance. Finally, the development of BD-NCD thin films and future research focus were prospected and expected. |
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