| LI Chun-wei,TIAN Xiu-bo,GONG Chun-zhi,XU Jian-ping.Evolution of Discharge Characteristics of High Power Impulse Magnetron Sputtering Vanadium Target under Various Argon Pressures[J],45(8):103-109 |
| Evolution of Discharge Characteristics of High Power Impulse Magnetron Sputtering Vanadium Target under Various Argon Pressures |
| Received:April 05, 2016 Revised:August 20, 2016 |
| View Full Text View/Add Comment Download reader |
| DOI：10.16490/j.cnki.issn.1001-3660.2016.08.018 |
| KeyWord:high power impulse magnetron sputtering argon pressure vanadium target discharge target current spectral characteristics vanadium films |
| Author | Institution |
| LI Chun-wei |
1.College of Engineering and Technology, Northeast Forestry University, Harbin , China; 2.State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin , China; 3.Post-doctoral Mobile Research Station of Forestry Engineering, Northeast Forestry University, Harbin , China |
| TIAN Xiu-bo |
State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin , China |
| GONG Chun-zhi |
State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin , China |
| XU Jian-ping |
Department of Materials and Chemical Engineering, Heilongjiang Institute of Technology, Harbin , China |
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| Abstract: |
| Objective As a new technology with high ionization rate of sputtered materials, High Power Impulse Magnetron Sputtering (HIPIMS) has widely received more and more attention home and abroad. The form and evolution of target pulse current and plasma emission spectrum of HIPIMS discharge with V target as an example under different working pressures have been investigated, which provide theoretical basis for the further application of HIPIMS technology. Methods HIPIMS pulse discharge current waveforms were acquired by digital oscilloscope and the spectral lines were recorded by emission spectrometer. The evolution law of V target HIPIMS discharge characteristics under different pressures was analyzed. At the same time, the V film was prepared by HIPIMS technique and the morphology of the V film was observed by scanning electron microscope. Results Under different argon pressures, the peak of discharge current, the platform of discharge current and the mean discharge current all monotonicly increased with target voltage. And they increased faster and faster. However, the peak value of the target current was significantly higher than that of the platform, which was due to the pulse peak current determined by gas discharge. Ar0, Ar+, V0 and V+ intensity increased with the increase of target voltage under different pressures. The spectral intensity increased with the increase of the pressure at the same target voltage. The ionizations of Ar and V were 78% and 35% at target voltage of 610 V and Ar pressure of 0.9 Pa. In addition, the V films prepared by HIPIMS technique were smooth and dense, and had no columnar crystal growth morphology. Conclusion Higher working pressure and target pulse voltage are beneficial to obtain higher system particle ionization rate, but the HIPIMS discharge is not stable. Suitable working pressure is the key to obtain high quality film. |
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