| YUAN Jun-ping,LI Wei,GUO Wen-xian.The Research Progress of Precursors for Atomic Layer Deposition[J],39(4):77-82 |
| The Research Progress of Precursors for Atomic Layer Deposition |
| Received:May 05, 2010 Revised:August 10, 2010 |
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| DOI： |
| KeyWord:atomic layer deposition precursor material |
| Author | Institution |
| YUAN Jun-ping |
1.College of Science& Technology, Jinan University, Guangzhou , China;2.Guangzhou Panyu Polytechnic, Guangzhou , China |
| LI Wei |
College of Science& Technology, Jinan University, Guangzhou , China |
| GUO Wen-xian |
College of Science& Technology, Jinan University, Guangzhou , China |
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| Abstract: |
| The basic theory and characteristics of ALD process were introduced in briefly, and the research progress of precursors was summarized from two groups,including inorganic and organicmetal. The characteristics of single elements and halides as precursors in inorganic group, and those of organicmetal precursors such as alkyls, cyclopentadienyls, alkoxides,β-Diketonates, alkylamides, silylamides and amidinates were discussed. Considering the ALD process characteristics and the requirement for the film,it emphasized that several important factors should be synthetically considered in selection of precursors, including vapor pressure, reactivity, chemical stability, activity of reaction products, safety and source, etc. |
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