| WANG Cheng-lei,GAO Yuan,BU Gen-tao,SHEN Gang.Effects of Process Parameters on the Phase Structure of TiN Layer by Plasma Synthesizing[J],39(2):47-49,60 |
| Effects of Process Parameters on the Phase Structure of TiN Layer by Plasma Synthesizing |
| Received:December 01, 2009 Revised:April 10, 2010 |
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| DOI： |
| KeyWord:double glow preferred orientation TiN films phase structure |
| Author | Institution |
| WANG Cheng-lei |
Guilin university of Electronic Technology, Guilin , China |
| GAO Yuan |
Guilin university of Electronic Technology, Guilin , China |
| BU Gen-tao |
Guilin university of Electronic Technology, Guilin , China |
| SHEN Gang |
Guilin university of Electronic Technology, Guilin , China |
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| Abstract: |
| TiN layer was formed on the surface of plain carbon steel by double glow plasma surface alloying technique. Effects of process parameters on the phase structure of TiN layer by plasma synthesizing were studied. The results shows that: When the TiN layer thickness is small, the growth of TiN layer presents{100}oriented growth trend under the control of surface energy, so that the free energy is lower in TiN layer system; When the TiN layer thickness is larger, the strain energy is the dominant factor, plays a major control action in the growth of TiN layers, so that TiN layer presenting{111}preferred orientation, thatis conducive to TiN layer of the system free energy reduction.With the increase in the thickness of the TiN layer,{111}preferred orientation growth is more significant. |
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