| CHEN Hui-min.Application and Development of Plasma Immersion Ion Implantation in the Material Surface Modification[J],37(5):79-81 |
| Application and Development of Plasma Immersion Ion Implantation in the Material Surface Modification |
| Received:June 30, 2008 Revised:October 10, 2008 |
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| DOI： |
| KeyWord:Conventional beam ion implantation Plasma Immersion Ion Implantation Ion-matrix sheath Surface modification |
| Author | Institution |
| CHEN Hui-min |
Shanghai University of Engineering Science, Shanghai , China |
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| Abstract: |
| Plasma immersion ion implantation is a new ion implantation technique for surface modification of materials. The principle and advantages of PIII were analyzed and discussed systematically. Untreated materials were placed directly in a plasma source chamber. It kept in conventional beam ion implantation ( CB II ) specialty, circumvents the line-of-sight restriction of conventional beam ion implantation, overcomes the retained did problem and made implantation devices simple and inexpensive. Its applications in surface modification of metallic materials, semiconductor materials and polymer materials were reviewed, the direction of its applications and development were indicated. |
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