| XUE Fei,LIU Jun-liang.Study on the Surface Composition Distribution of GeSi Nanostructures by High Resolution FE-AES and SEM[J],37(5):24-25 |
| Study on the Surface Composition Distribution of GeSi Nanostructures by High Resolution FE-AES and SEM |
| Received:June 25, 2008 Revised:October 10, 2008 |
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| DOI： |
| KeyWord:Auger mapping Nanostructures QDs Composition distribution |
| Author | Institution |
| XUE Fei |
Baosteel Institute of Baoshan Iron & Steel Co. , Ltd. , Shanghai , China |
| LIU Jun-liang |
Baosteel Institute of Baoshan Iron & Steel Co. , Ltd. , Shanghai , China |
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| Abstract: |
| High-resolution schottky field emission Auger electron spectroscpy ( FE-AES) and scanning electron microscopy ( SEM) were used to investigate the surface topography and distribution of the lateral composition of Ge QDs grown by molecular beam epitaxy on Si( 001) substrate. Two types of samples grown at 550℃ and 640℃ were investigated respectively. Results demonstrate that the dot lateral composition is neither pure Ge nor Si nor homogeneous GexSil-x, but the mixture of Si and Ge. The composition distribution is asymmetric in one dome-shaped dot, showed lower Ge concentration in the periphery part and higher Ge concentration in the center part. Domes grown at 640℃ show different composition distribution features even m same shaped domes. This noticeable difference can be attributed to the different degrees of Si alloying into the Ge QDs at different growth temperatures. |
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