ZHAO Sheng-Ii,CHEN Hai-yun,WEN jiu-ba,BI Yu-xin,Zhang Ying-tao,ZHAO Chong-jun.Preparation of SiOx Film by Sol-gel Process and Its Adhesion to Al Substrate[J],37(1):25-27,47
Preparation of SiOx Film by Sol-gel Process and Its Adhesion to Al Substrate
Received:October 23, 2007  Revised:February 10, 2008
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KeyWord:Silicon oxides film  Al substrate  Sol-gel  Morphology and structure  Adhesion
                 
AuthorInstitution
ZHAO Sheng-Ii School of Materials Science & Engineering, Henan University of Science & Technology, Luoyang , China
CHEN Hai-yun School of Materials Science & Engineering, Henan University of Science & Technology, Luoyang , China
WEN jiu-ba School of Materials Science & Engineering, Henan University of Science & Technology, Luoyang , China
BI Yu-xin School of Materials Science & Engineering, Henan University of Science & Technology, Luoyang , China
Zhang Ying-tao School of Materials Science & Engineering, Henan University of Science & Technology, Luoyang , China
ZHAO Chong-jun Institute of Materials Science, East China University of Science & Technology, Shanghai , China
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Abstract:
      In order to fabricate high quality solid carrier for protein chip, silicon oxides ( SiOx) thin film was prepared on Al substrate by sol-gel and spin coating technique, and its surface morphology, structure, composition and adhesion to Al substrate were examined by SEM, TEM, XRD and EDX. The results show that the SiOx thin film prepared by acid sol will seriously crack, which obviously deteriorates its surface performance. However, at same experiment condition , the SiOx thin film fabricates with alkalescent sol possesses more uniform surface with a few fine cracks for forming less stress in heating treatment. Furthermore , a non-crystalline SiOx film with larger special area, uniform roughness, free of any cracks and firm adhesion to Al substrate is prepared by alkalescent sol added a small quantity of DMF, which is expected to use as solid carrier for protein chip.
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