李振东,詹华,王亦奇,汪瑞军,王伟平.等离子体刻蚀前处理对碳基薄膜结合力的影响[J].表面技术,2017,46(1):64-68.
LI Zhen-dong,ZHAN Hua,WANG Yi-qi,WANG Rui-jun,WANG Wei-ping.Effects of Plasma Etching Pretreatment on Adhesion of Carbon-based Film[J].Surface Technology,2017,46(1):64-68 |
| 等离子体刻蚀前处理对碳基薄膜结合力的影响 |
| Effects of Plasma Etching Pretreatment on Adhesion of Carbon-based Film |
| 投稿时间：2016-06-08 修订日期：2017-01-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2017.01.011 |
| 中文关键词: 等离子刻蚀 阳极层离子源 M50轴承钢 钨掺杂类金刚石薄膜 离子源功率 |
| 英文关键词:plasma etching anode-layer ion source M50 steel Tungsten doped DLC ion source power |
| 基金项目: |
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| Author | Institution |
| LI Zhen-dong | Chinese Academy of Agricultural Mechanization Sciences, Beijing 100083, China |
| ZHAN Hua | Chinese Academy of Agricultural Mechanization Sciences, Beijing 100083, China |
| WANG Yi-qi | 1.Chinese Academy of Agricultural Mechanization Sciences, Beijing 100083, China; 2.Beijing Golden Wheel Special Machine Co., Ltd, Beijing 100083, China |
| WANG Rui-jun | 1.Chinese Academy of Agricultural Mechanization Sciences, Beijing 100083, China; 2.Beijing Golden Wheel Special Machine Co., Ltd, Beijing 100083, China |
| WANG Wei-ping | 1.Chinese Academy of Agricultural Mechanization Sciences, Beijing 100083, China; 2.Beijing Golden Wheel Special Machine Co., Ltd, Beijing 100083, China |
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| 中文摘要: |
| 目的 通过等离子刻蚀处理使基体表面更洁净，从而提高薄膜与基体的结合力。方法 采用阳极层离子源，通过不同的离子源功率和处理时间对M50轴承钢样品进行处理，并在处理过的样品表面制备钨掺杂类金刚石薄膜。利用原子力显微镜对等离子刻蚀处理前后的样品表面形貌进行研究，利用Raman光谱分析薄膜的微观结构，利用划痕仪对薄膜与基体的结合力进行研究。结果 不同的离子源功率和刻蚀时间，得到了不同的基体微观表面粗糙度；钨掺杂类金钢石薄膜的D峰和G峰分别在1350 cm−1附近和1580 cm−1附近，为典型的类金刚石结构，ID/IG值在1.5左右；未经等离子刻蚀前处理样品的膜/基结合力是23 N；而优化等离子刻蚀前处理参数样品的膜/基结合力高达69 N，最佳的离子源功率和刻蚀时间为2 kW、60 min。结论 等离子刻蚀前处理能够有效提高薄膜与基体的结合力。 |
| 英文摘要: |
| The work aims to improve adhesion between film and substrate by studying the effects of plasma etching pretreatment on and the substrate. Anode-layer ion source was used to treat the M50 steel sample provided with different ion source power and treatment time, and tungsten doped DLC film was prepared on surface of the treated sample. Surface morphology of the sample before and after plasma etching treatment was studied by virtue of an atomic force microscope; microstructure of the film was analyzed by using a Raman spectroscopy; adhesion between film and substrate was studied by using a scratch tester. Different ion source power and plasma etching time led to different substrate micro surface roughness; with D peak and G peak values close to 1350 cm−1 and 1580 cm−1, Tungsten doped DLC film was typical diamond like carbon structure, its ID/IG value was nearly 1.5; adhesion between film and substrate not subject to plasma etching pretreatment was 23 N while that of the sample subject to plasma etching pretreatment was up to 69 N; the best ion source power and etching time were 2 kW and 60 min respectively. Plasma etching pretreatment can improve the adhesion between the film and substrate effectively. |
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