钟利,陈美艳,刘旋,张悦,姚可.溅射技术对BT板表面铜膜结构和电性能的影响[J].表面技术,2025,54(8):227-234.
ZHONG Li,CHEN Meiyan,LIU Xuan,ZHANG Yue,YAO Ke.Effect of Sputtering Technique on the Structure and Electrical Properties of Copper Films on the Surface of BT Plates[J].Surface Technology,2025,54(8):227-234 |
| 溅射技术对BT板表面铜膜结构和电性能的影响 |
| Effect of Sputtering Technique on the Structure and Electrical Properties of Copper Films on the Surface of BT Plates |
| 投稿时间：2024-07-11 修订日期：2025-02-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2025.08.021 |
| 中文关键词: 高功率脉冲磁控镀膜 直流磁控溅射镀膜 BT板 表面金属化 XPS |
| 英文关键词:high power pulsed magnetron coating DC magnetron sputtering coating BT plate surface metallization XPS |
| 基金项目:中核集团青年英才项目(2023JZYF-01，2022JZYF-04);西物创新行动项目(202301XWCX003) |
| 作者 | 单位 |
| 钟利 | 核工业西南物理研究院，成都 610207 |
| 陈美艳 | 核工业西南物理研究院，成都 610207 |
| 刘旋 | 核工业西南物理研究院，成都 610207 |
| 张悦 | 核工业西南物理研究院，成都 610207 |
| 姚可 | 核工业西南物理研究院，成都 610207 |
|
| Author | Institution |
| ZHONG Li | Southwest Institute of Physics, Chengdu 610207, China |
| CHEN Meiyan | Southwest Institute of Physics, Chengdu 610207, China |
| LIU Xuan | Southwest Institute of Physics, Chengdu 610207, China |
| ZHANG Yue | Southwest Institute of Physics, Chengdu 610207, China |
| YAO Ke | Southwest Institute of Physics, Chengdu 610207, China |
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| 中文摘要: |
| 目的 为了对比不同技术制备的导电铜膜的性能，分别以直流磁控溅射镀膜技术和高功率脉冲磁控溅射镀膜技术在BT树脂材料表面沉积铜膜。方法 通过检测铜膜的表面微观形貌、化学元素成分、物相结构和孔隙率，对铜膜的微观状态进行对比和分析，并结合铜膜的宏观电性能，对不同镀膜过程中的成膜机理、影响参数及规律展开研究。结果 研究证明，直流磁控溅射铜膜的结晶度更高，但高功率脉冲铜膜的孔隙率更低、晶粒更细小、相对纯度更高，虽然高功率磁控膜具有更好的微观性能，但薄膜的电性能受到晶粒取向、晶界长度等多种因素的影响，高功率磁控溅射膜中的微观优势并未产生明显作用，反而呈现出较直流磁控膜更弱的导电性:经测试，直流磁控铜膜方阻为23 mΩ/□，高功率脉冲铜膜的方阻为337 mΩ/□。结论 采用直流磁控和高功率脉冲磁控技术都能在BT板表面镀覆性能优良的铜膜，从而实现高聚合树脂材料的表面金属化处理，虽然高功率脉冲铜膜具有更好的微观性能，但电性能却远不及直流磁控溅射铜膜，目前在工程实际应用上还不能完全取代直流磁控，仍需针对膜层物相调控、纯度和电性能等方面展开持续深入的研究。 |
| 英文摘要: |
| High-power pulsed magnetron sputtering coating technology (short in HiPIMS) is an advanced surface modification technology which uses pulsed transient high energy current density of the ion beam to form coatings on the surface of the substrate and controls the rate of temperature rise of the substrate and the microscopic properties of coatings by reducing the average power. Therefore, it has received widespread attention and vigorous development in recent years, but its in-depth comparison with the DC magnetron sputtering technology (short in DCMS) is not sufficient yet. Due to the large differences in physical and chemical properties and poor compatibility between the BT resin material and the copper coating, the interface bonding strength is low between the substrate and the coating, which becomes the source of defects such as microcracks in the coating. The work aims to study the microscopic and macroscopic properties of copper films deposited on BT resin materials by DCMS and HiPIMS respectively. The BT resin was cut into long rectangles of 20 mm×20 mm×1 mm as the base material and ultrasonically cleaned by acetone and anhydrous ethanol and dried. The base material was cleaned and activated through glow sputtering by a low-energy, wide-amplitude and large-current ion beam generated by the filamentless bar-Hall ion source under the vacuum condition of 3×10−3 Pa, and then the copper film was deposited by DCMS and HiPIMS respectively. The current of DCMS was 2 A, the peak current and the average power of HiPIMS were 60 A and 400 W correspondingly, and the thicknesses of both copper films were 1 μm. Then, the microstructure of the films was observed by a scanning electron microscope (FEI-NOVA NANO 230 type) and the component was analyzed by the EDS spectrum of each selected point taken by an energy spectrometer (X-MAX5 type). The density of the surface copper film was analyzed by MIP method and the phase composition was investigated by an X-ray diffractometer (EMPYREAN). The bonding strength between the film layer and the base was qualitatively judged by the scratch test and quantitatively characterized by the pull-off test referring to the standard GB/T9286-2021. The square resistance of the thin layer was tested by a dual electric measurement instrument with four probes (RTS-5). Two well-formed metallic copper coatings are successfully deposited on the surface of BT resin material by both DCMS and HiPIMS. The coating deposited by DCMS has higher crystallinity while the coating deposited by HiPIMS has lower porosity, finer grains and higher relative purity. Although the HiPIMS coating has better microscopic properties, the advantage does not have an obvious effect in conductivity because of that the electrical properties is much more affected by a variety of factors in crystallization aspect, such as grain orientation, grain boundary length, etc. The square resistance of the coatings is tested to be 23 mΩ/□ for DCMS and 337 mΩ/□ for HiPIMS. DCMS and HiPIMS both can be applied and developed on the surface metallization of the BT plate, and the copper coating deposited by HiPIMS shows weaker electrical properties than the copper coating deposited by DCMS although it has better microscopic properties, so HiPIMS could not completely replace DCMS at present in the practical application of the project without a sustained in-depth research of the coating such as phase regulation, purity and electrical properties, etc. |
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