肖金,罗佳,方掩,张浩,池浩坪.基于表面Ni/Ag膜改性铜的固相键合方法[J].表面技术,2025,54(8):219-226, 243.
XIAO Jin,LUO Jia,FANG Yan,ZHANG Hao,CHI Haoping.Solid-phase Bonding Method Based on Surface Ni/Ag Film-modified Copper[J].Surface Technology,2025,54(8):219-226, 243 |
| 基于表面Ni/Ag膜改性铜的固相键合方法 |
| Solid-phase Bonding Method Based on Surface Ni/Ag Film-modified Copper |
| 投稿时间：2024-06-21 修订日期：2024-11-01 |
| DOI：10.16490/j.cnki.issn.1001-3660.2025.08.020 |
| 中文关键词: 铜晶 分级结构 键合 电子封装 |
| 英文关键词:copper crystals hierarchical structures bonding electronic packaging |
| 基金项目:智能制造现代产业学院专项经费(0220119) |
| 作者 | 单位 |
| 肖金 | 赣南科技学院 智能制造与材料工程学院，江西 赣州 341000 |
| 罗佳 | 赣南科技学院 智能制造与材料工程学院，江西 赣州 341000 |
| 方掩 | 格力电器赣州有限公司，江西 赣州 341400 |
| 张浩 | 赣南科技学院 智能制造与材料工程学院，江西 赣州 341000 |
| 池浩坪 | 赣南科技学院 智能制造与材料工程学院，江西 赣州 341000 |
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| Author | Institution |
| XIAO Jin | School of Intelligent Manufacturing and Materials Engineering, Gannan University of science and technology, Jiangxi Ganzhou 341000, China |
| LUO Jia | School of Intelligent Manufacturing and Materials Engineering, Gannan University of science and technology, Jiangxi Ganzhou 341000, China |
| FANG Yan | Gree Electric Ganzhou Co., Ltd., Jiangxi Ganzhou 341400, China |
| ZHANG Hao | School of Intelligent Manufacturing and Materials Engineering, Gannan University of science and technology, Jiangxi Ganzhou 341000, China |
| CHI Haoping | School of Intelligent Manufacturing and Materials Engineering, Gannan University of science and technology, Jiangxi Ganzhou 341000, China |
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| 中文摘要: |
| 目的 以特殊形貌铜晶结构为基板，在其上修饰Ni膜和Ag膜作为键合偶的两端，在常温条件瞬时实现键合互连，解决电子元件尤其是薄芯片长时间承受热冲击产生的热损伤问题，保证电子元件结构和功能的可靠性。方法 以电沉积的Ni膜改性铜和Ag膜改性铜为基础，在压力5 MPa下，超声波横向振动产生摩擦，瞬间实现Cu—Cu键合，键合时间3 s，超声振动3 s。用扫描电子显微镜、透射电子显微镜等研究键合界面处的显微组织、成分以及性能。结果 超声振动引起瘤刺状Ni层和团簇状Ag层的横向摩擦，Cu-Ni层和Cu-Ag层在垂直压力作用下相互挤压嵌入，发生塑性变形。经过200 h长时间高温热处理后(160 ℃)，键合界面没有产生孔洞，界面的可靠性优良。这种固相键合方法不需要额外的热处理过程以增加键合界面的强度，在后续的使用过程中依然保持良好的可靠性。结论 由于表面改性膜的特殊形貌、纳米尺寸效应、中间层缓冲作用以及超声波的引入，键合在瞬间、室温条件下完成，不需要超高真空、超高表面平整度等复杂的工艺，与回流焊所需的高温相比，键合条件更加宽松，能耗低，符合绿色封装的发展趋势。 |
| 英文摘要: |
| The copper crystal structure with special morphology is selected as the substrate. The Ni and Ag films are modified on the copper substrate as the two ends of the bonding couple. Bonding interconnections are realized instantaneously at room temperature. This solves the problem of thermal damage to electronic components, especially thin chips, caused by long-term thermal shock. It ensures the reliability of the structure and function of electronic components. Electrodeposited Ni film-modified Cu and Ag film-modified Cu are used as the basis for instantaneous Cu-Cu bonding due to friction generated by ultrasonic transverse vibration at a pressure of 5 MPa. The bonding time is 3 s, and the ultrasonic vibration is 3 s. Scanning electron microscopy and transmission electron microscopy are used to study the microstructure, composition, and properties at the bonding interface. Ultrasonic vibration leads to lateral friction of the verrucose Ni layer and the cluster Ag layer. The friction makes the bonding interface heat up rapidly. Due to the nano-size effect, the Ag layer softens and melts under both heat and vertical pressure. The harder, spiky Ni layer can be more easily inserted into the softened clustered Ag layer. The Cu-Ni layer and the Cu-Ag layer are extruded and embedded in each other under vertical pressure and the plastic deformation occurs. Ultrasonication accelerates the solid-liquid reaction, and the bonding interface accelerates the reaction to produce solid solution, forming solid solution strengthening. The bonding process is completed in a few seconds and a defect-free bonding interface is obtained. The special morphology of the surface structure of these copper crystals has a facilitating effect on the interfacial diffusion reaction, increasing the diffusion area of Ag and Ni atoms. After 200 h of prolonged high-temperature heat treatment (160 ℃), no holes are produced at the bonding interface, and the reliability of the interface is excellent. This solid-phase bonding method does not require an additional heat treatment process to increase the strength of the bonding interface and maintains good reliability during subsequent use. The bonding is instantaneously accomplished at room temperature under the synergistic effect of the special morphology of the surface-modified film, the nano-size effect, the cushioning effect of the intermediate layer, and the ultrasonic waves. This bonding method does not require complex processes such as ultra-high vacuum and ultra-high surface flatness. Special properties can be obtained in the bonding process by utilizing nanometer special morphology and size effect. Nanolayers are easier to extrude and deform. Nanomorphology increases the contact area and atomic diffusion area of bonding couples, and reduces the interfacial holes. High strength joints can be obtained at room temperature. This method reduces the damage to the function and structure of the chip during the bonding process and provides excellent package reliability. Compared with the high temperatures required for reflow soldering, the bonding conditions are more relaxed and the energy consumption is low, which is in line with the development trend of green packaging. |
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