侯焕然,金扬利,石晓飞,张运生,王衍行,祖成奎.ITO沉积温度对ITO/Au透明导电薄膜光电性能的影响[J].表面技术,2025,54(4):233-241, 261.
HOU Huanran,JIN Yangli,SHI Xiaofei,ZHANG Yunsheng,WANG Yanhang,ZU Chengkui.Effect of ITO Deposition Temperature on Photoelectric Properties of ITO/Au Transparent Conductive Films[J].Surface Technology,2025,54(4):233-241, 261 |
| ITO沉积温度对ITO/Au透明导电薄膜光电性能的影响 |
| Effect of ITO Deposition Temperature on Photoelectric Properties of ITO/Au Transparent Conductive Films |
| 投稿时间：2024-03-21 修订日期：2024-04-27 |
| DOI：10.16490/j.cnki.issn.1001-3660.2025.04.019 |
| 中文关键词: 沉积温度、氧化铟锡、超薄金膜、透明导电薄膜、磁控溅射、光电性能、表面自由能 |
| 英文关键词:deposition temperature indium tin oxide ultra-thin gold film transparent conductive film magnetron sputtering photoelectric property surface free energy |
| 基金项目: |
| 作者 | 单位 |
| 侯焕然 | 中国建筑材料科学研究总院有限公司，北京 100024 |
| 金扬利 | 中国建筑材料科学研究总院有限公司，北京 100024 |
| 石晓飞 | 中国建筑材料科学研究总院有限公司，北京 100024 |
| 张运生 | 中国建筑材料科学研究总院有限公司，北京 100024 |
| 王衍行 | 中国建筑材料科学研究总院有限公司，北京 100024 |
| 祖成奎 | 中国建筑材料科学研究总院有限公司，北京 100024 |
|
| Author | Institution |
| HOU Huanran | China Building Materials Academy, Beijing 100024, China |
| JIN Yangli | China Building Materials Academy, Beijing 100024, China |
| SHI Xiaofei | China Building Materials Academy, Beijing 100024, China |
| ZHANG Yunsheng | China Building Materials Academy, Beijing 100024, China |
| WANG Yanhang | China Building Materials Academy, Beijing 100024, China |
| ZU Chengkui | China Building Materials Academy, Beijing 100024, China |
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| 中文摘要: |
| 目的 研究衬底层ITO的沉积温度对ITO/Au透明导电薄膜光电性能的影响规律和机理。方法 采用直流磁控溅射技术，在不同沉积温度下制备的ITO薄膜表面沉积超薄Au膜，利用扫描电子显微镜、原子力显微镜、分光光度计、四探针电阻测试仪对ITO/Au薄膜的表面形貌、表面粗糙度、透光率及表面方阻进行表征和测试，分析ITO沉积温度对ITO/Au光电性能的影响机理。为了进一步理解超薄Au膜生长连续性改善的原因，通过几何平均法和算术平均法分别计算了ITO薄膜的表面自由能，分析了ITO薄膜表面自由能的改变对生长形貌的影响规律。结果 在超薄Au膜镀制工艺相同的前提下，随着衬底层ITO薄膜沉积温度升高，ITO/Au薄膜的可见光平均透过率提升，表面方阻值降低。这是因为当沉积温度高于200 ℃时，ITO薄膜发生多晶化转变，多晶态的ITO相较于非结晶态具有更高的表面自由能，更有利于超薄Au膜的铺展，进而提升ITO/Au薄膜的光电性能。当ITO沉积温度提升至300 ℃时，ITO薄膜的表面自由能几何平均法计算结果为45.2 mJ/m2，算术平均法计算结果为48.1 mJ/m2，在其表面沉积超薄Au膜后，制备了可见光平均透过率为47.5%、表面方阻为5.65 Ω/sq，高光电性能兼容的ITO/Au薄膜。结论 提高衬底层ITO薄膜的沉积温度，ITO薄膜发生多晶化转变，表面自由能提升，可有效促进超薄Au膜在其表面铺展，进而提升ITO/Au薄膜的光电性能。 |
| 英文摘要: |
| With the rapid development of radar detection technology, the electromagnetic shielding stealth of weapons and warplanes is becoming more and more important in modern warfare, especially in guided missiles, weapon pods and other glass surfaces. During the occasions above, the high optical transmittance and strong electromagnetic shielding effectiveness are common technical requirements. The work aims to investigate the effect law and mechanism of deposition temperature of the substrate layer ITO on the photoelectric properties of ITO/Au transparent conductive films, so as to improve the photoelectric properties of ITO/Au films. By employing the direct current magnetron sputtering technology, ultra-thin Au films were deposited on the ITO films prepared at different deposition temperatures (50-300 ℃). The surface morphology, roughness, transmittance, and surface resistivity of the ITO/Au films were characterized and tested by scanning electron microscopy, atomic force microscopy, spectrophotometry, and a four-point probe resistivity meter. In order to further analyze the surface state of the ITO films, the surface free energy of the ITO films was calculated by geometric-mean method and harmonic-mean method, with ultra-pure water, formamide and diiodomethane as test liquids. The effect mechanism of the ITO film deposition temperature on the photoelectric properties of the ITO/Au films was explained by numerical analysis of the surface free energy of ITO films prepared at different deposition temperatures. It was found that, in the same ultra-thin Au film deposition process, the optoelectronic properties of the ITO/Au films were improved as the deposition temperature of the substrate layer ITO film increased. Meanwhile, the ultra-thin Au film deposited on the surface of the ITO film prepared at a higher deposition temperature had lower roughness and more continuous growth morphology. This was because that when the deposition temperature was higher than 200 ℃, the ITO film underwent a polycrystalline transformation. The polycrystalline ITO had a higher surface free energy than that of the amorphous state, which was more conducive to the spreading of ultra-thin Au films. The electrical properties of the ITO/Au film were closely related to the growth continuity of the ultra-thin Au film, and better continuity of the ITO/Au film promoted the photoelectric properties. When the ITO deposition temperature reached 300 ℃, the geometric-mean of the surface free energy for the ITO film was calculated to be 45.2 mJ/m2, and the harmonic-mean was calculated to be 48.1 mJ/m2. On this basis, the ITO/Au thin films, with high photoelectric property compatibility and low surface roughness, were prepared. The average transmittance of visible light was 47.5%, the surface square resistance was 5.65 Ω/sq, and the surface roughness was 1.42 nm. In conclusion, the deposition temperature of the ITO film has a great effect on the photoelectric properties of the ITO/Au film. With the increase of the deposition temperature, the ITO film changes from amorphous to polycrystalline state. Due to the polycrystalline transition, the surface free energy of the ITO film increases, which effectively promotes the spreading of the ultra-thin Au film. The improvement of the continuity of the ultra-thin Au film obviously promotes the improvement of the photoelectric properties of the ITO/Au film. This research may provide process guidance and theoretical reference for the research and industrial production of ITO/Au thin films. |
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