杨友明,周海,胡士响,夏丽琴,任相璞.紫外光催化辅助Ga面GaN化学机械抛光试验研究[J].表面技术,2024,53(6):157-167.
YANG Youming,ZHOU Hai,HU Shixiang,XIA Liqin,REN Xiangpu.Ultraviolet Photocatalysis Assisted Chemical Mechanical Polishing of GaN Surface[J].Surface Technology,2024,53(6):157-167 |
| 紫外光催化辅助Ga面GaN化学机械抛光试验研究 |
| Ultraviolet Photocatalysis Assisted Chemical Mechanical Polishing of GaN Surface |
| 投稿时间：2023-05-04 修订日期：2023-09-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2024.06.014 |
| 中文关键词: 氮化镓 紫外光催化 抛光 MRR 表面粗糙度 单因素试验 正交试验 |
| 英文关键词:GaN UV photocatalysis polishing MRR Ra single-factor test orthogonal test |
| 基金项目:国家自然科学基金面上项目(51675457);盐城工学院研究生实践创新计划(SJCX22_XZ013) |
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| Author | Institution |
| YANG Youming | School of Mechanical Engineering, Yancheng Institute of Technology, Jiangsu Yancheng 224051, China |
| ZHOU Hai | School of Mechanical Engineering, Yancheng Institute of Technology, Jiangsu Yancheng 224051, China |
| HU Shixiang | School of Mechanical Engineering, Yancheng Institute of Technology, Jiangsu Yancheng 224051, China |
| XIA Liqin | School of Mechanical Engineering, Yancheng Institute of Technology, Jiangsu Yancheng 224051, China |
| REN Xiangpu | School of Mechanical Engineering, Yancheng Institute of Technology, Jiangsu Yancheng 224051, China |
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| 中文摘要: |
| 目的 探究在紫外光催化辅助抛光过程中，相关因素对氮化镓晶片Ga面去除率(MRR)及表面粗糙度(Ra)的影响规律，提高单晶氮化镓高效率低损伤的超光滑表面质量。方法 通过结合紫外光与化学机械进行抛光，采用单因素试验方案，对GaN晶片的Ga面进行紫外光催化辅助化学机械抛光试验，比较在无光照、光照抛光盘、光照抛光液3种抛光方式和不同TiO2浓度、pH值、H2O2含量、抛光压力、抛光盘转速和抛光液流条件下的抛光效果。最后通过正交试验进行抛光工艺参数优化，通过测量不同条件下紫外光催化辅助化学机械抛光过程中的MRR值和Ra值，探究GaN晶片Ga面抛光效果。结果 在紫外光催化辅助抛光条件下，通过对单因素试验和正交试验的抛光参数进行分析和优化，GaN晶片材料去除率可以达到698.864 nm/h，通过白光干涉仪观测可以获得表面粗糙度Ra值为0.430 nm的亚纳米级超光滑GaN晶体表面。结论 基于紫外光催化辅助GaN晶片Ga面化学机械抛光试验，紫外光辅助化学机械的复合抛光方式能够促进GaN表面生成物Ga2O3快速去除，其中光照抛光液方式能够极大地提高抛光效率。紫外光催化辅助Ga面GaN化学机械抛光可以获得高效低损伤的单晶氮化镓抛光加工表面质量。 |
| 英文摘要: |
| This study aims to investigate the effects of various polishing parameters (TiO2 concentration, pH value, H2O2 concentration, polishing pressure, polishing pad rotational speed, and polishing slurry flow rate) on the material removal rate (MRR) and surface roughness (Ra) of Ga-face GaN substrates during the ultraviolet light-catalyzed chemical mechanical polishing (CMP) process. Based on the optimization of polishing process parameters, an efficient and low-damage polishing process was developed. Single-factor and orthogonal experiments were designed to investigate the effects of the aforementioned polishing parameters on the polishing effects of GaN substrates while satisfying the requirements for material removal rate and surface roughness. During the polishing process, three different polishing methods (non-illuminated polishing, illuminated polishing pad polishing, and illuminated polishing slurry polishing) and the effects of different factors such as TiO2 concentration, pH value, H2O2 concentration, polishing pressure, polishing pad rotational speed, and polishing slurry flow rate on the polishing efficiency of GaN substrates were compared In the orthogonal experiment, the polishing process parameters were optimized and the MRR and Ra values under different process parameter conditions were measured to explore the polishing effects on the Ga-face of GaN substrates. The experimental results showed that using a self-made polishing slurry with the addition of nano-TiO2 photocatalytic abrasive and adopting the illuminated polishing slurry method could achieve good polishing effects and a low-damage, high-quality ultra-smooth surface. Furthermore, under the ultraviolet light-catalyzed polishing condition, according to the results of the orthogonal experiment, a pH value of 11, an H2O2 concentration of 4wt.%, a TiO2 concentration of 3wt.%, a polishing pressure of 16 000 Pa, a polishing pad rotational speed of 30 r/min, a polishing slurry flow rate of 2.5 mL/min, and an illuminated polishing slurry polishing method were selected for the polishing optimization experiment. The removal rate of GaN substrate could reach 698.864 nm/h, which significantly improved the polishing efficiency compared with the unilluminated polishing method. In addition, the surface roughness Ra value of the ultra-smooth GaN crystal surface could be obtained by observing with a white light interferometer, which was 0.430 nm in the sub-nanometer range. Based on the comprehensive experimental results, it is believed that ultraviolet light-catalyzed chemical mechanical polishing is an efficient and low-damage surface quality polishing method for single crystal GaN substrates. It can promote the rapid removal of Ga2O3 generated on the GaN surface and improve the polishing efficiency. By using the illuminated polishing slurry method, the polishing efficiency of the Ga-face of the GaN substrate can be greatly improved. Considering all of these factors, it is concluded that based on the ultraviolet light-catalyzed GaN substrate Ga-face chemical mechanical polishing experiment, the composite polishing method of ultraviolet light-assisted combined with chemical mechanical polishing can achieve efficient and low-damage polishing for single crystal GaN substrates. TiO2 concentration, pH value, H2O2 concentration, polishing pressure, polishing pad rotational speed, polishing slurry flow rate, and illuminated polishing method can all affect the polishing effects of GaN substrates. The experiment shows that TiO2 concentration, pH value, and illuminated polishing method have a relatively significant impact on the polishing effects of GaN substrates. |
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