吴敏科,任璐,任瑞祥,李家豪,赵超凡,余洋.ZnO基Z型异质结结构光催化性能研究进展[J].表面技术,2023,52(11):200-215.
WU Min-ke,REN Lu,REN Rui-xiang,LI Jia-hao,ZHAO Chao-fan,YU Yang.Research Progresses on Photocatalytic Properties of Z-scheme Heterojunction Structures Based on ZnO[J].Surface Technology,2023,52(11):200-215 |
| ZnO基Z型异质结结构光催化性能研究进展 |
| Research Progresses on Photocatalytic Properties of Z-scheme Heterojunction Structures Based on ZnO |
| 投稿时间：2022-08-15 修订日期：2023-03-01 |
| DOI：10.16490/j.cnki.issn.1001-3660.2023.11.015 |
| 中文关键词: 氧化锌 Z型异质结 光催化 半导体 有机污染物 |
| 英文关键词:ZnO Z-scheme heterojunction photocatalysis semiconductor organic pollutants |
| 基金项目:国家自然科学基金(51902219);江苏省自然科学基金(BK20190949);苏州科技大学大学生创新训练项目(202110332040Y) |
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| Author | Institution |
| WU Min-ke | School of Civil Engineering, Suzhou University of Science and Technology, Jiangsu Suzhou, 215011, China |
| REN Lu | School of Civil Engineering, Suzhou University of Science and Technology, Jiangsu Suzhou, 215011, China |
| REN Rui-xiang | School of Civil Engineering, Suzhou University of Science and Technology, Jiangsu Suzhou, 215011, China |
| LI Jia-hao | School of Civil Engineering, Suzhou University of Science and Technology, Jiangsu Suzhou, 215011, China |
| ZHAO Chao-fan | School of Civil Engineering, Suzhou University of Science and Technology, Jiangsu Suzhou, 215011, China |
| YU Yang | School of Civil Engineering, Suzhou University of Science and Technology, Jiangsu Suzhou, 215011, China |
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| 中文摘要: |
| 氧化锌(ZnO)作为一种常见的光催化剂，存在光能利用率低、效率低、易失活等缺陷，限制了其广泛应用。通过与带隙结构匹配的半导体材料构筑异质结结构，是解决上述问题的有效途径。其中，Z型异质结结构是一种新型异质结，由于其电子转移过程构成了英文字母Z的形状，因而称之为Z型异质结。在光生载流子迁移上，Z型异质结具有独特的结构特点。不仅能够增加光生电子与空穴的分离效率，还能保持较高的氧化还原能力。系统地从Z型异质结、二元Z型异质结结构、三元Z型异质结结构3个方面综述了近期ZnO基Z型异质结结构在光催化方面的研究进展。对ZnO与半导体氧化物、半导体硫化物及其他半导体材料构成二元Z型异质结的机理及其催化性能的提高进行了概括总结。梳理了三元异质结的光催化机理及三元Z型异质结在光催化性能上的优势。最后对Z型异质结的研究进行总结，为纳米ZnO光催化氧化技术的应用发展提供参考。 |
| 英文摘要: |
| As a common photocatalyst, Zinc oxide (ZnO) has some defects, such as poor utilization of light energy, low efficiency and easy deactivation, which limit its wide applications. It is one of the hotspots to solve the above problems to construct ZnO-based heterojunction structures by selecting semiconductor materials that can match the ZnO-band gap structure. Recently, forming Z-scheme heterojunction of ZnO is a new approach to improve its photocatalytic performance because its electron transfer process forms the shape of the English letter Z . This paper systematically introduced the research progress of nano ZnO photocatalytic efficiency improvement from three aspects:Z-scheme heterojunction structure, binary Z-scheme heterojunction structure, and ternary Z-scheme heterojunction structure. Firstly, heterojunction structures and Z-scheme heterojunction structure were explained in details. Heterojunction structures referred to the contact interfaces between two semiconductor materials with different band structures. Among them, Type-Ⅱ type heterojunction structures were arranged in a staggered manner of the two bands, which was the most studied traditional heterojunction structure. Different from Type-Ⅱ traditional heterojunction, the specific carrier migration process of Z-scheme heterojunction structure was as follows:the electrons in the conduction band of the semiconductor Ⅱ recombined with the holes in the valence band of the semiconductor Ⅰ. Meanwhile, the residual electrons mainly existed in the conduction band of semiconductorⅠ, and the holes mainly existed in the valence band of semiconductor Ⅱ. Thus, Z-scheme heterojunction structure had a higher separation efficiency of photogenerated carriers and maintained a high redox capacity. Secondly, ZnO-based binary Z-scheme heterojunction structures were discussed and the mechanisms of the improved of catalytic performance were summarized. Those binary Z-scheme heterojunctions were formed by ZnO with semiconductor oxides (e.g. WO3/ZnO, TiO2/ZnO, CeO2/ZnO, Cu2O/ZnO), semiconductor sulfides (e.g. ZnS/ZnO, CdS/ZnO), and other semiconductor materials (e.g. g-C3N4/ZnO, Ag3PO4/ZnO). The photogenerated electrons retained in the conduction band of ZnO or matched semiconductor maintain high reduction capacity, and the photogenerated holes retained in the valence band of matched semiconductor or ZnO maintain high oxidation capacity. Eventually, the composite catalyst showed better photocatalytic activity. The binary Z-scheme heterojunction constructed with the visible-light semiconductor catalyst could also promote the light response range of ZnO-based photocatalyst from ultraviolet light to visible light, which improved the utilization of light energy, and solved the limitation of ZnO excited only by ultraviolet light. Thirdly, the photocatalytic mechanism of ternary heterojunction and the advantages of ternary Z-scheme heterojunction in photocatalytic performance were reviewed. The ZnO-based ternary Z-scheme heterojunction structure was more complex than the binary heterojunction in terms of composition and charge migration. The most common type of ternary Z-scheme heterojunction was the inclusion of noble metal as an intermediate electron medium between two semiconductor materials (e.g. ZnO-Ag-BiVO4, ZnO-Au-ZnAl2O4). The ternary Z-scheme heterojunction structure of noble metal-ZnO system also could be built through the ZnO-based binary Z-scheme heterojunctions further modified by noble metals (e.g. Au-g-C3N4-ZnO). Other constructions of ternary Z-type heterojunctions were composed of three kinds of semiconductor materials, resulting in a double Z-scheme charge transport (e.g. ZnO/ZnWO4/g-C3N4, Bi2MoO6/ZnSnO3/ZnO). Finally, the research prospect of Z-scheme heterojunctions was summarized. Compared with pure ZnO photocatalyst, ZnO-based Z-scheme heterojunction structure had more potential in the catalysts design, and had more advantages in degradation of organic pollutants, hydrogen production and other photocatalysis. That provides a reference for the design, preparation and performance improvement of other semiconductor materials. |
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