曹威,邓朝晖,李重阳,葛吉民.化学机械抛光垫的研究进展[J].表面技术,2022,51(7):27-41.
CAO Wei,DENG Zhao-hui,LI Zhong-yang,GE Ji-min.Polishing Pad in Chemical Mechanical Polishing[J].Surface Technology,2022,51(7):27-41 |
| 化学机械抛光垫的研究进展 |
| Polishing Pad in Chemical Mechanical Polishing |
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| DOI：10.16490/j.cnki.issn.1001-3660.2022.07.003 |
| 中文关键词: 化学机械抛光 抛光垫 设计制备 磨损 修整 |
| 英文关键词:chemical mechanical polishing polishing pad design and preparation wear conditioning |
| 基金项目:湖南省高新技术产业科技创新引领计划(2020GK2003);湖南省自然科学基金(2020JJ4024);国家自然科学基金–浙江两化融合联合基金资助项目(U1809221);长株潭国家自主创新示范区专项(2017XK2302) |
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| Author | Institution |
| CAO Wei | Hunan Provincial Key Laboratory of High Efficiency and Precision Machining of Difficult-to-Cut Materials,Hunan Xiangtan 411201, China ;School of Mechanical Engineering, Hunan University of Science and Technology, Hunan Xiangtan 411201, China |
| DENG Zhao-hui | Hunan Provincial Key Laboratory of High Efficiency and Precision Machining of Difficult-to-Cut Materials,Hunan Xiangtan 411201, China ;School of Mechanical Engineering, Hunan University of Science and Technology, Hunan Xiangtan 411201, China |
| LI Zhong-yang | Hunan Provincial Key Laboratory of High Efficiency and Precision Machining of Difficult-to-Cut Materials,Hunan Xiangtan 411201, China ;School of Mechanical Engineering, Hunan University of Science and Technology, Hunan Xiangtan 411201, China |
| GE Ji-min | Hunan Provincial Key Laboratory of High Efficiency and Precision Machining of Difficult-to-Cut Materials,Hunan Xiangtan 411201, China ;School of Mechanical Engineering, Hunan University of Science and Technology, Hunan Xiangtan 411201, China |
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| 中文摘要: |
| 化学机械抛光(CMP)作为一种超精密加工技术，在集成电路制造、计算机硬盘、微机电系统、光学元件加工等领域得到了广泛的应用。抛光垫设计制备、抛光垫磨损、抛光垫修整均会对化学机械抛光产生影响。首先从抛光垫基体、抛光垫表面纹理、抛光垫结构等3个方面对抛光垫设计制备相关研究进行了综述，重点介绍了不同基体材质抛光垫的抛光性能，指出了各材质抛光垫的优缺点。其次，介绍了抛光和修整过程中的抛光垫磨损，对比了各研究者建立的抛光垫磨损模型，概述了抛光垫磨损监测技术的研究现状，并指出目前抛光垫磨损状态的监测手段较为单一，采用融合多传感器信号对抛光垫磨损状态进行监测，可以提高其监测精度。为了进一步探究抛光垫修整对抛光性能的影响，归纳了修整器的结构参数，以及修整参数对修整效果的影响，介绍了几种新型修整器结构，并综述了抛光垫自修整技术的研究进展。最后，总结了目前关于研究抛光垫设计制备、抛光垫磨损、抛光垫修整等方面存在的问题，并对其发展前景进行了展望。 |
| 英文摘要: |
| As an ultra-precision machining technology, chemical mechanical polishing (CMP) has been widely used in integrated circuit manufacturing, computer hard disk, micro electro mechanical system, optical element processing and other fields. The design and preparation, the wear status and the conditioning of the polishing pad all have influence on CMP. In this paper, the research on the design and preparation of polishing pad is summarized from three aspects:polishing pad substrate, polishing pad surface texture and polishing pad structure. The polishing effect of the polishing pad with different substrates is introduced emphatically and therefore their advantages and disadvantages are concluded. Besides, the polishing pad wear in the processes of polishing and conditioning is introduced, and the wear models of polishing pad established by different researchers are compared. The research status of the polishing pad wear monitoring technology is introduced, and the fact that the current monitoring method of polishing pad wear is relatively simple is pointed out thus, which can be improved by fusion of multi-sensor signals to get higher monitoring accuracy. Next, in order to further explore the influence of polishing pad conditioning on polishing performance, the structure parameters of the conditioner and the effect of conditioning parameters on the conditioning are studied. Subsequently, several conditioners with new structures are introduced, and the research progress of polishing pad self-conditioning technology is summarized. Finally, through the analysis of the three aspects above, the existing problems in the research of polishing pad design and preparation, polishing pad wear, and polishing pad conditioning, and the prospect of polishing pad development are discussed. |
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