杜玲玲,周细应,李晓,周文华,范志君.Sn掺杂对SixSb100–x相变薄膜结晶行为的影响[J].表面技术,2021,50(9):169-175.
DU Ling-ling,ZHOU Xi-ying,LI Xiao,ZHOU Wen-hua,FAN Zhi-jun.Effects of Sn Doping on Crystallization Behavior of SixSb100–x Phase Change Films[J].Surface Technology,2021,50(9):169-175
Sn掺杂对SixSb100–x相变薄膜结晶行为的影响
Effects of Sn Doping on Crystallization Behavior of SixSb100–x Phase Change Films
投稿时间:2020-12-08  修订日期:2021-04-01
DOI:10.16490/j.cnki.issn.1001-3660.2021.09.017
中文关键词:  相变薄膜  电学特性  结晶温度  十年数据保持力  结晶行为  表面形貌
英文关键词::Structural features of Ge1Sb4Te7, an intermetallic compound in the GeTe-Sb2Te3 homologous series[J]. ChemInform, 2008, 39(50):255-259.
基金项目:
作者单位
杜玲玲 上海工程技术大学,上海 201620 
周细应 上海工程技术大学,上海 201620 
李晓 上海工程技术大学,上海 201620 
周文华 上海工程技术大学,上海 201620 
范志君 上海工程技术大学,上海 201620 
AuthorInstitution
DU Ling-ling Shanghai University of Engineering Science, Shanghai 201620, China 
ZHOU Xi-ying Shanghai University of Engineering Science, Shanghai 201620, China 
LI Xiao Shanghai University of Engineering Science, Shanghai 201620, China 
ZHOU Wen-hua Shanghai University of Engineering Science, Shanghai 201620, China 
FAN Zhi-jun Shanghai University of Engineering Science, Shanghai 201620, China 
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中文摘要:
      目的 通过掺杂不同含量的Sn,提升SixSb100–x相变薄膜的结晶温度、热稳定性和相转变速度,得到一种环境友好型无Te相变薄膜材料。方法 利用三靶磁控共溅射的方式制备掺Sn的SixSb100–x相变薄膜,并采用真空四探针测试系统,得到电阻-温度数据以及不同升温速率下的电阻数据,从而通过Kissinger和Arrhenius公式计算出结晶激活能和十年数据保持力。分别使用EDS、XRD、AFM对相变薄膜的成分、结构、表面形貌进行分析。结果 Sn掺杂为2%(原子数分数)时,结晶温度由199 ℃增至219 ℃,结晶激活能由3.879 eV增至4.390 eV,十年数据保持力由122 ℃增至144 ℃,具有良好的晶态/非晶态热稳定性;晶粒尺寸减小至20 nm,产生了更多的晶界,这有助于增强电子散射,从而产生更高的电阻。Sn掺杂使薄膜的结晶机制由形核型为主转化为生长型为主,有利于提高其相转变速度。结论 少量Sn掺杂的SixSb100–x相变薄膜具有较高的结晶温度、较大的结晶激活能、更高的电阻和良好的十年数据保持力;过量的Sn掺杂使SixSb100–x相变薄膜晶粒尺寸变大,不利于薄膜性能的优化。
英文摘要:
      To improve the crystallization temperature, thermal stability and phase transition velocity of SixSb100–x phase change films by doping different contents of Sn. Finally, an environmentally friendly Te free phase change films was obtained. SixSb100–x phase change films doped with Sn were prepared by three-target magnetron sputtering method, and resistor-temperature data and resistance data at different temperature rates were obtained by vacuum four-probe test system, so as to calculate 10-year data retention force and crystallization activation energy by Arrhenius formula and Kissinger formula. The composition, structure and surface morphology of the films were analyzed by EDS, XRD and AFM. When the Sn doping was 2at%, the change of resistance with temperature was analyzed, the crystallization temperature increased from 199 ℃ to 219 ℃, the crystallization activation energy increased from 3.879 eV to 4.390 eV, and the data retention force increased from 122 ℃ to 144 ℃ for ten years, showing good crystalline/amorphous thermal stability; The microstructure before and after annealing is analyzed, and the grain size is reduced to 20 nm, which produces more grain boundaries, which is helpful to enhance electron scattering and thus produce higher resistance; By analyzing the surface morphology, the Sn doping makes the crystallization mechanism of the thin film mainly transform from the nucleating type to the growing type, which is conducive to improving the phase transition speed. A small amount of Sn doped SixSb100–x phase change films has a higher crystallization temperature, greater crystallization activation energy, higher resistance and good ten-year data retention; Excessive Sn doping makes the grain size of SixSb100–x phase change films larger, which is not conducive to the optimization of the properties of SixSb100–x films.
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