李晓晖,宋凯强,丛大龙,张敏,孙彩云,吴护林,李忠盛.高透明低发射率ITO薄膜的制备及其光电性能研究[J].表面技术,2020,49(7):126-132.
LI Xiao-hui,SONG Kai-qiang,CONG Da-long,ZHANG Min,SUN Cai-yun,WU Hu-lin,LI Zhong-sheng.Preparation and Photoelectric Properties of ITO Thin Films with High Transparency and Low Emissivity[J].Surface Technology,2020,49(7):126-132
高透明低发射率ITO薄膜的制备及其光电性能研究
Preparation and Photoelectric Properties of ITO Thin Films with High Transparency and Low Emissivity
投稿时间:2020-02-26  修订日期:2020-07-20
DOI:10.16490/j.cnki.issn.1001-3660.2020.07.016
中文关键词:  磁控溅射  ITO薄膜  透过率  方块电阻  辐射率
英文关键词:magnetron sputtering  ITO thin film  transmittance  square resistance  emissivity
基金项目:
作者单位
李晓晖 西南技术工程研究所,重庆 400039 
宋凯强 西南技术工程研究所,重庆 400039 
丛大龙 西南技术工程研究所,重庆 400039 
张敏 西南技术工程研究所,重庆 400039 
孙彩云 西南技术工程研究所,重庆 400039 
吴护林 西南技术工程研究所,重庆 400039 
李忠盛 西南技术工程研究所,重庆 400039 
AuthorInstitution
LI Xiao-hui Southwest Institute of Technology and Engineering, Chongqing 400039, China 
SONG Kai-qiang Southwest Institute of Technology and Engineering, Chongqing 400039, China 
CONG Da-long Southwest Institute of Technology and Engineering, Chongqing 400039, China 
ZHANG Min Southwest Institute of Technology and Engineering, Chongqing 400039, China 
SUN Cai-yun Southwest Institute of Technology and Engineering, Chongqing 400039, China 
WU Hu-lin Southwest Institute of Technology and Engineering, Chongqing 400039, China 
LI Zhong-sheng Southwest Institute of Technology and Engineering, Chongqing 400039, China 
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中文摘要:
      目的 研究磁控溅射工艺对ITO薄膜光电性能的影响,为制备高性能ITO薄膜提供数据和理论支撑。方法 采用磁控溅射在PET基材上制备ITO薄膜,利用扫描电镜、X射线衍射仪、分光光度计、四探针、红外发射率测仪、Hall效应测试系统等,分析工艺参数对ITO薄膜光电性能的影响。结果 随着氧气流量的增加,ITO薄膜在可见光区的透过率先增加,然后变缓,薄膜方块电阻先降低后升高;随着工作气压的增加,ITO薄膜的可见光透过率增加,薄膜方块电阻先下降后上升,电阻率先变小再增大,载流子浓度先增大后减小,红外发射率先减小后增大,晶体结构逐渐由晶态转变为非晶态;随着氩氧比的降低,薄膜红外发射率先降低,然后缓慢升高;随溅射时间的增加,薄膜的厚度逐渐增大,方块电阻、红外发射率和可见光透过率迅速下降,晶体结构逐渐由非晶结构转变为晶体结构。综合对比研究发现,当氧气流量为0.6 mL/min、工作气压为0.4 Pa、氩氧比为19.8∶0.2、溅射时间为80 min时,可获得综合性能优异的ITO薄膜,其可见光透过率大于80%,在8~14 μm红外波段的辐射率小于0.2。结论 磁控溅射工艺参数是决定薄膜综合质量的重要因素,通过严格控制工艺参数,可获得透明性高、发射率低的ITO薄膜。
英文摘要:
      The work aims to study the influence of magnetron sputtering technology on the photoelectric properties of ITO thin films, so as to provide data and theoretical support for the preparation of high-performance ITO thin films. The ITO thin film was prepared by magnetron sputtering on PET substrate, and the effects of process parameters on the photoelectric properties of ITO thin film were analyzed by scanning electron microscope, X-ray diffractometer, spectrophotometer, four- probe, infrared emittance meter, Hall effect test system, etc. With the increase of oxygen flow, the transmittance of ITO thin film firstly increased and then slowed down in visible light region, and the block resistance of the thin film firstly decreased and then increased. With the increase of working pressure, the visible light transmittance of ITO thin film increased, the block resistance firstly decreased and then increased, the resistance firstly decreased and then increased, the carrier concentration firstly increased and then decreased, the infrared emissivity firstly decreased and then increased, and the crystal structure gradually changed from crystal state to amorphous state. With the decrease of the argon-oxygen ratio, the infrared emissivity of the thin film decreased firstly and then increased slowly. With the increase of sputtering time, the thickness of the thin film increased gradually, the block resistance, infrared emissivity and visible light transmittance decreased rapidly, and the crystal structure gradually changed from amorphous structure to crystal structure. From the comprehensive comparative study, when the oxygen flow rate was 0.6 mL/min, the working pressure was 0.4 Pa, the argon-oxygen ratio was 19.8∶0.2, and the sputtering time was 80 min, the ITO thin film with excellent comprehensive performance could be obtained, with the visible light transmittance greater than 80% and the emissivity less than 0.2 in the infrared band of 8~14 μm. Magnetron sputtering process parameters are important factors to determine the comprehensive quality of thin films. By strictly controlling the process parameters, ITO thin films with high transparency and low emissivity can be obtained.
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