翁俊,刘繁,孙祁,汪建华.CO2-CH4沉积气氛中金刚石膜晶粒尺寸的控制研究[J].表面技术,2018,47(1):211-217.
WENG Jun,LIU Fan,SUN Qi,WANG Jian-hua.Investigation on the Grain Size Control of Diamond Films in CO2-CH4 Gas Mixture[J].Surface Technology,2018,47(1):211-217 |
| CO2-CH4沉积气氛中金刚石膜晶粒尺寸的控制研究 |
| Investigation on the Grain Size Control of Diamond Films in CO2-CH4 Gas Mixture |
| 投稿时间：2017-05-26 修订日期：2018-01-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2018.01.033 |
| 中文关键词: 微米金刚石膜 纳米金刚石膜 无氢气沉积 可控性生长 微波等离子体 |
| 英文关键词:microcrystalline diamond film nanocrsrystalline diamond film hydrogen-free deposition controllable growth microwave plasma |
| 基金项目:国家自然科学基金项目（11175137）；湖北省教育厅基金项目（W20151517）；武汉工程大学科学研究基金项目（K201506） |
| 作者 | 单位 |
| 翁俊 | 武汉工程大学 湖北省等离子体化学与新材料重点实验室，武汉430205 |
| 刘繁 | 武汉工程大学 湖北省等离子体化学与新材料重点实验室，武汉430205 |
| 孙祁 | 武汉工程大学 湖北省等离子体化学与新材料重点实验室，武汉430205 |
| 汪建华 | 武汉工程大学 湖北省等离子体化学与新材料重点实验室，武汉430205 |
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| Author | Institution |
| WENG Jun | Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan Institute of Technology, Wuhan 430205, China |
| LIU Fan | Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan Institute of Technology, Wuhan 430205, China |
| SUN Qi | Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan Institute of Technology, Wuhan 430205, China |
| WANG Jian-hua | Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan Institute of Technology, Wuhan 430205, China |
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| 中文摘要: |
| 目的 在无氢气沉积环境中研究CO2与CH4的流量比对金刚石膜生长及晶粒尺寸的影响规律。方法 采用MPCVD技术，通过调控CO2与CH4的流量比，可控性地制备得到不同结构特征的金刚石膜，通过SEM、XRD以及Raman光谱对金刚石膜进行表征分析，获得CO2与CH4的流量比对金刚石膜晶粒尺寸的影响规律。结果 在微波功率、沉积气压、基片温度和CH4流量分别为1.2 kW、7.0 kPa、850 ℃和50 mL/min的沉积环境下，当CO2流量为20和25 mL/min时，可制备得到纳米金刚石膜；当CO2流量为30和35 mL/min时，可制备得到微米金刚石膜；当CO2流量为67 mL/min时，可获得金刚石颗粒。在保持其他工艺条件不变时，通过调控微波功率分别为0.9、1.4和1.8 kW，金刚石膜的晶粒尺寸随CO2/CH4的变化可分为：纳米金刚石膜区（CO2/CH4<50%）、微米金刚石膜区（CO2/CH4>60%）及纳米-微米过渡区（50% |
| 英文摘要: |
| The work aims to study law of influence of CO2/CH4 flow ratio on growth of diamond films and grain size. The diamond films exhibiting different structural features were prepared controllably by adjusting the CO2/CH4 flow ratio and applying MPCVD technology. The diamond films were characterized and analyzed with scanning electron microscope, X-ray diffractometer and Raman spectrum, the rule of influence of CO2/CH4 flow ratio on grain size of diamond films was obtained. When microwave power, deposition pressure, substrate temperature and of CH4 flow was 1.2 kW, 7.0 kPa, 850 ℃ and 50 mL/min, respectively, nanocrystalline diamond films could be deposited using 20 and 25 mL/min CO2, microcrystalline diamond films could be obtained using 30 and 35 mL/min CO2, and diamond could be deposited using 67 mL/min CO2. By adjusting microwave power to 0.9, 1.4, 1.8 kW, respectively while keeping the other parameters constant, grain size variation of diamond films along with the CO2/CH4 flow ratio could be divide into three regions: nanocrystalline diamond film deposition region (CO2/CH4<50%), microcrystalline diamond film deposition region (CO2/CH4>60%), and grain size transition region (50% |
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