王洁,袁巨龙,吕冰海,吕迅,曹霖霖,彭超飞.大粒径SiO2磨粒固结磨具加工蓝宝石试验研究[J].表面技术,2017,46(4):258-263.
WANG Jie,YUAN Ju-long,LYU Bing-hai,LYU Xun,CAO Lin-lin,PENG Chao-fei.Experimental Study on Processing of Sapphire with Bonded Large Particle Size SiO2 Grain Bonded Grain Bonded Abrasive Tool[J].Surface Technology,2017,46(4):258-263 |
| 大粒径SiO2磨粒固结磨具加工蓝宝石试验研究 |
| Experimental Study on Processing of Sapphire with Bonded Large Particle Size SiO2 Grain Bonded Grain Bonded Abrasive Tool |
| 投稿时间：2016-12-11 修订日期：2017-04-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2017.04.042 |
| 中文关键词: SiO2 氯氧镁结合剂 固结磨具 大粒径 蓝宝石 固相反应 |
| 英文关键词:SiO2 magnesium oxychloride binder bonded abrasive tool large particle size sapphire solid phase reaction |
| 基金项目:国家自然科学基金项目（51575492）；浙江省教育厅科研项目（Y201326972）；浙江省教育厅高校访问学者教师发展项目（FX2014149） |
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| Author | Institution |
| WANG Jie | 1.Ultra-precision Machining Center, Zhejiang University of Technology, Hangzhou 310014, China; 2.Fair Friend Institute of Electromechanics, Hangzhou Vocational & Technical College, Hangzhou 310018, China |
| YUAN Ju-long | Ultra-precision Machining Center, Zhejiang University of Technology, Hangzhou 310014, China |
| LYU Bing-hai | Ultra-precision Machining Center, Zhejiang University of Technology, Hangzhou 310014, China |
| LYU Xun | Ultra-precision Machining Center, Zhejiang University of Technology, Hangzhou 310014, China |
| CAO Lin-lin | Ultra-precision Machining Center, Zhejiang University of Technology, Hangzhou 310014, China |
| PENG Chao-fei | Ultra-precision Machining Center, Zhejiang University of Technology, Hangzhou 310014, China |
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| 中文摘要: |
| 目的 验证大粒径（>30 μm）SiO2磨粒固结磨具加工蓝宝石晶片的有效性，优化磨具配方，为实现蓝宝石晶片高效、高质量、低成本加工提供有效参考。方法 制作不同配方的氯氧镁结合剂SiO2固结磨具加工蓝宝石，以去除率、表面粗糙度为评价指标，研究磨粒粒度、结合剂比例、磨粒含量对加工效果的影响。结果 6种不同粒径（均>30 μm）的SiO2磨粒固结磨具加工蓝宝石，表面粗糙度均有改善，粒径越小，改善效果越好。结合剂中，活性MgO、MgCl2和H2O三者的摩尔比会影响去除率和粗糙度。磨具磨粒的含量高，去除率高，粗糙度小。结论 氯氧镁结合剂中，活性MgO:MgCl2:H2O的摩尔比为7:1:16，325# SiO2为磨粒，磨粒质量占结合剂质量的60%，制作磨具加工蓝宝石，转速210 r/min，加载0.4 MPa，加工3 h，去除率为平均17 μm/h，表面粗糙度Ra由初始平均345 nm改善至平均9 nm。 |
| 英文摘要: |
| The wok aims to verify effectiveness of processing of sapphire with bonded large particle size (>30 μm) SiO2 grain bonded abrasive tool, optimize abrasive tool formulas and provide effective reference for high efficiency, high quality and low cost processing of sapphire wafer. With magnesium oxychloride cement as binder, bonded SiO2 grain bonded abrasive tools with different formulas were fabricated to process sapphire. Removal rate and surface quality were taken as evaluation indices to study the effects of particle size, binder proportion and grain percentage on processing effects. The sapphire was processed by six kinds of SiO2 grain bonded abrasive tools of different particle sizes (all >30 μm). Surface roughness was improved. The smaller the particle size was, the better the improvement effect was. The removal rate and roughness were influenced by the mole ratio of active MgO, MgCl2 and H2O. The higher the abrasive grain content was, the higher removal rate was, and the smaller surface quality was. In the magnesium oxychloride binder, the molar ratio of active MgO:MgCl2:H2O was 7:1:16; 325# SiO2 was used as abrasives, and the grain mass accounted for 60% of the binder mass. Abrasive tool is made to process sapphire with revolving speed of 210 r/min, load of 0.4 MPa, processing duration of 3 h. The average removal rate is 17 μm/h, and the surface roughness Ra increases from initial average 345 nm to average 9 nm. |
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