欧文敏,韦春贝,代明江,侯惠君,林松盛,邱万奇.MoS2-Zr复合薄膜的摩擦学性能研究[J].表面技术,2017,46(1):93-99. OU Wen-min,WEI Chun-bei,DAI Ming-jiang,HOU Hui-jun,LIN Song-sheng,QIU Wan-qi.Tribological Properties of MoS2-Zr Composite Films[J].Surface Technology,2017,46(1):93-99 |
MoS2-Zr复合薄膜的摩擦学性能研究 |
Tribological Properties of MoS2-Zr Composite Films |
投稿时间:2016-09-03 修订日期:2017-01-20 |
DOI:10.16490/j.cnki.issn.1001-3660.2017.01.016 |
中文关键词: MoS2-Zr复合薄膜 磁控溅射 微观结构 硬度 结合力 摩擦系数 |
英文关键词:MoS2-Zr composite films magnetron sputtering microstructure hardness adhesion friction coefficient |
基金项目:广州市科技计划项目(201510010016);广东省科技计划项目(2013B091602002、2014B070706026、2013B061800053);广东省科学院平台建设项目(2016GDASPT-0206、2016GDASPT-0317) |
作者 | 单位 |
欧文敏 | 1.华南理工大学 材料科学与工程学院,广州 510640;2.广东省新材料研究所 现代材料表面工程技术国家工程实验室 广东省现代表面工程技术重点实验室,广州 510651 |
韦春贝 | 广东省新材料研究所 现代材料表面工程技术国家工程实验室 广东省现代表面工程技术重点实验室,广州 510651 |
代明江 | 广东省新材料研究所 现代材料表面工程技术国家工程实验室 广东省现代表面工程技术重点实验室,广州 510651 |
侯惠君 | 广东省新材料研究所 现代材料表面工程技术国家工程实验室 广东省现代表面工程技术重点实验室,广州 510651 |
林松盛 | 广东省新材料研究所 现代材料表面工程技术国家工程实验室 广东省现代表面工程技术重点实验室,广州 510651 |
邱万奇 | 华南理工大学 材料科学与工程学院,广州 510640 |
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Author | Institution |
OU Wen-min | 1.School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; 2.Guangdong Institute of New Materials, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Key Lab of Guangdong for Modern Surface Engineering Technology, Guangzhou 510651, China |
WEI Chun-bei | Guangdong Institute of New Materials, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Key Lab of Guangdong for Modern Surface Engineering Technology, Guangzhou 510651, China |
DAI Ming-jiang | Guangdong Institute of New Materials, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Key Lab of Guangdong for Modern Surface Engineering Technology, Guangzhou 510651, China |
HOU Hui-jun | Guangdong Institute of New Materials, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Key Lab of Guangdong for Modern Surface Engineering Technology, Guangzhou 510651, China |
LIN Song-sheng | Guangdong Institute of New Materials, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Key Lab of Guangdong for Modern Surface Engineering Technology, Guangzhou 510651, China |
QIU Wan-qi | School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China |
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中文摘要: |
目的 改善MoS2薄膜的疏松结构,提高其硬度及摩擦磨损性能。方法 采用离子源辅助磁控溅射技术在GCr15基体上沉积不同Zr含量的MoS2-Zr复合薄膜,通过SEM分析薄膜的表面及截面形貌。采用EDS检测薄膜的成分,采用显微维氏硬度计测试薄膜的硬度,采用Rockwell-C硬度计进行压痕测试实验,采用球-盘式旋转摩擦磨损试验机评价薄膜的摩擦磨损性能。结果 MoS2-Zr复合薄膜的致密程度和硬度随着Zr含量的增加而增大,其硬度值为300~500HV。复合薄膜与基体的结合力随着Zr含量的增加而增强,但当Zr含量过高时,结合力下降。含Zr原子数分数为15%的MoS2-Zr复合薄膜具有最好的摩擦学性能,其平均摩擦系数为0.09,磨损率为9.33×107 mm3•N–1•m–1,耐磨寿命达5.25×105 r。结论 Zr的掺杂改善了纯MoS2薄膜的疏松结构,提高了MoS2薄膜的硬度和结合力,合适的Zr掺杂可以获得较低的摩擦系数和较长的耐磨寿命。 |
英文摘要: |
The work aims to improve loose structure, hardness, friction and wear properties of MoS2 films. MoS2-Zr composite films with different Zr content were deposited on GCr15 substrate by ion assisted magnetron sputtering technology. Morphology of surface and cross section of films was analyzed by SEM; composition was determined by EDS; hardness by Micro Vickers tester; indentation test was performed by Rockwell-C hardness tester; friction and wear properties of the films were evaluated by ball-disk rotating friction and wear tester. The compactness and hardness of MoS2-Zr composite films increased with the increase of Zr content with hardness value ranging from 300~500HV. The adhesion strength between composite film and substrate increased with the increase of Zr content and decreased in case of excessive Zr content. The MoS2-Zr composite films with 15 at.% Zr content showed the best tribological properties, their average friction coefficient was 0.09, wear rate 9.33×107 mm3•N–1•m–1 and wear life 5.25×105 r. Loose structure, hardness and adhesion strength of MoS2-Zr composite films were improved. Lower friction coefficient and longer wearing life can be obtained provided with appropriate Zr doping content. |
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