胡东平,王小龙,唐俐.本底真空对磁控溅射镍铬合金薄膜电阻的影响[J].表面技术,2016,45(7):143-149.
HU Dong-ping,WANG Xiao-long,TANG Li.Influence of Base Pressure on Electrical Resistance of NiCr Films Deposited by Magnetron Sputtering[J].Surface Technology,2016,45(7):143-149 |
| 本底真空对磁控溅射镍铬合金薄膜电阻的影响 |
| Influence of Base Pressure on Electrical Resistance of NiCr Films Deposited by Magnetron Sputtering |
| 投稿时间：2016-03-03 修订日期：2016-07-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2016.07.024 |
| 中文关键词: 镍铬合金薄膜 磁控溅射 本底真空 电阻率 热处理 |
| 英文关键词:Ni-Cr alloy thin films magnetron sputter base pressure resistivity heat treated |
| 基金项目:中国工程物理研究院重大基金（2010A0302013） |
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| 中文摘要: |
| 目的 研究本底真空对溅射镍铬合金薄膜性能的影响。 方法 在不同溅射时间下制备了不同厚度的镍铬合金薄膜，采用 4、 6、 8、 10 h 不同的抽真空时间制备薄膜样品，并在空气、氮气及真空气氛中，对同一工艺条件下制备的镍铬合金薄膜样品分别在 300、 400、 500 ℃下进行热处理，所有样品分别测试方块电阻。 结果 不同厚度的镍铬合金薄膜的方块电阻与薄膜厚度之间存在非线性关系，样品的方块电阻随着溅射前抽真空时间的增加而降低。在真空和空气中进行热处理的薄膜的方块电阻变化规律一致，而在氮气中的则相反。 结论 本底真空残留气体对镍铬合金薄膜的氧化是引起薄膜电阻率增大的主要原因，即射频磁控溅射镍铬合金薄膜被氧化而使电阻率增大，随着溅射时间的增加，残留气体影响减小，导致电阻率降低。前期抽真空时间大于 9 h，靶材溅射清洗时间大于 110 min 时，制备的镍铬合金薄膜电阻率才趋于稳定。 |
| 英文摘要: |
| Objective NiCr alloy thin films are commonly deposited by the magnetron sputtering and the base pressure is one of the important process parameters. The influence of the base pressure on the electrical resistance of Ni-Cr alloy films was studied. Methods Thin films of various thicknesses were deposited at different sputtering time, thin films were deposited atdifferent vacuum-pumping time of 4 h, 6 h, 8 h, 10 h, the electrical resistance of them was tested. Thin films deposited at the same process were heat treated in different atmospheres and the electrical resistance of them was tested. Results The relationship between the electrical resistance and the thickness of NiCr alloy thin films was nonlinear. The electrical resistance of the films decreased with the vacuum time increasing. The transformation tendency of the electrical resistance of the films heat treated in air or in vacuum was consistent. While that heat treated in nitrogen was opposite. Conclusion The experimental results indicated that the electrical resistivity of Ni-Cr alloy films was influenced by the gas residues in vacuum environment of the base pressure, and the main reason for it was the oxidation reaction of the films. The electrical resistivity of Ni-Cr alloy films would be in asymptotic stability after the 9 h vacuum-pumping and the 110 min target sputtering. |
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