吴珺仪,李忠盛,吴护林,李立.铝合金微弧氧化陶瓷膜表面复合化学镀 Ni-P-SiC 的研究[J].表面技术,2013,42(4):52-55.
WU Jun-yi,LI Zhong-sheng,WU Hu-lin,LI Li.Investigation on Electroless Ni-P-SiC Composite Plating on Micro-arc Oxidation Film of Aluminium Alloy[J].Surface Technology,2013,42(4):52-55 |
| 铝合金微弧氧化陶瓷膜表面复合化学镀 Ni-P-SiC 的研究 |
| Investigation on Electroless Ni-P-SiC Composite Plating on Micro-arc Oxidation Film of Aluminium Alloy |
| 投稿时间：2013-04-05 修订日期：2013-05-13 |
| DOI： |
| 中文关键词: 复合化学镀 Ni-P-SiC 镀层 铝合金 微弧氧化 |
| 英文关键词:electroless composite plating Ni-P-SiC plating aluminium alloy micro-arc oxidation |
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| Author | Institution |
| WU Jun-yi | Chongqing Nankai Secondary School, Chongqing 400030 , China |
| LI Zhong-sheng | College of Materials Science and Engineering, Chongqing University, Chongqing 400044 , China |
| WU Hu-lin | College of Materials Science and Engineering, South China University of Technology, Guangzhou 510640 , China |
| LI Li | College of Materials Science and Engineering, Chongqing University, Chongqing 400044 , China |
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| 中文摘要: |
| 采用复合化学镀方法在铝合金微弧氧化陶瓷膜表面制备了 Ni-P-SiC 复合镀层, 研究了镀液中SiC 浓度对复合镀层物相、显微组织、沉积速率的影响,并测试了复合涂层( 陶瓷膜 / 复合镀层) 的结合力。 结果表明:Ni-P-SiC 复合镀层为非晶态结构,与陶瓷膜的界面清晰,完全封闭了微弧氧化陶瓷膜表面的微孔;随着镀液中SiC 含量的增加,复合镀层沉积速率降低,SiC 共析量则是先快速增大,当含量达到 16 g / L 后就基本保持不变。 |
| 英文摘要: |
| Ni-P-SiC composite plating was prepared on micro-arc oxidation film of aluminium alloy by electroless composite plating. The effect of SiC concentration in the solution on phase, microstructure and deposition rate was investigated. The adhesion of composite coating ( micro-arc oxidation film and Ni-P-SiC composite plating) was also tested. The results show that the structure of Ni-P-SiC composite plating are amorphous. The interface between composite plating and ceramic film is distinct . Ni-P-SiC composite plating could cover the micropore of micro-arc oxidation film. The deposition rate of Ni-P-SiC composite plating is reduced as the concentration of SiC in the solution increasing. The amount of eutectoid SiC increases quickly with SiC concentration in the solution increased and remains unchanged while the concentration of SiC reaching 16 g / L. |
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