王敏,郭会勇,张果戈,李文芳.Ba0.5Sr0.5TiO3铁电薄膜的微弧氧化成膜研究[J].表面技术,2013,42(4):35-38.
WANG Min,GUO Hui-yong,ZHANG Guo-ge,LI Wen-fang.Formation of Ba0.5Sr0.5TiO3Ferroelectric Film by Microarc Oxidation[J].Surface Technology,2013,42(4):35-38 |
| Ba0.5Sr0.5TiO3铁电薄膜的微弧氧化成膜研究 |
| Formation of Ba0.5Sr0.5TiO3Ferroelectric Film by Microarc Oxidation |
| 投稿时间：2013-02-27 修订日期：2013-04-02 |
| DOI： |
| 中文关键词: Ba0.5Sr0.5TiO3 铁电薄膜 微弧氧化 介电性能 |
| 英文关键词:Ba0.5Sr0.5TiO3 ferroelectric films microarc oxidation dielectric property |
| 基金项目:中国博士后科学基金特别资助项目(200902317) ;中央高校基本科研业务费专项资金资助项目(2012ZZ0011) |
| 作者 | 单位 |
| 王敏 | 广东技术师范学院 机电学院, 广州 510665 |
| 郭会勇 | 平高集团有限公司,平顶山 467001 |
| 张果戈 | 华南理工大学 材料科学与工程学院, 广州 510640 |
| 李文芳 | 华南理工大学 材料科学与工程学院, 广州 510640 |
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| Author | Institution |
| WANG Min | College of Mechanical Engineering, Guangdong Polytechnic Normal University,Guangzhou 510665 China |
| GUO Hui-yong | Pinggao Group Company Limited, Pingdingshan 467001 ,China |
| ZHANG Guo-ge | School of Material and Engineering, South China University, Guangzhou 510640 China |
| LI Wen-fang | School of Material and Engineering, South China University, Guangzhou 510640 China |
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| 中文摘要: |
| 以 0 . 2 mol / L Ba( OH)2+0 . 2 mol / L Sr( OH)2 溶液为电解液,采用微弧氧化法,在 Ti 板表面原位生长铁电薄膜,并对薄膜的物相构成、元素分布情况、截面结构及介电性能进行表征。 结果表明:该工艺下制备的薄膜主要由四方相 Ba0.5Sr0.5TiO3 构成,薄膜致密层内,Ba,Sr,Ti 和 O 元素分布都较均匀,但在微弧氧化孔洞附近存在含量波动;该薄膜在 1 kHz 下的介电常数较优,为 411 . 3 。 最后对微弧氧化沉积铁电薄膜的成膜过程进行了分析,提出了微弧氧化过程中可能存在的化学反应。 |
| 英文摘要: |
| Ba0.5Sr0.5TiO3thin films were conducted by microarc oxidation and placing titanium plates as anode in 0 . 2 mol / L barium hydroxide & 0 . 2 mol / L strontium hydroxide aqueous solution. Phase composition, elements distribution, cross section structure and dielectric properties of the films were characterized. The results show that the films are composed mainly of tetragonal Ba0.5Sr0.5TiO3phases. The distribution of Ba, Sr , Ti, and O element is uniform in dense layer in addition to micropore area. The film has excellent dielectric property, in the frequency of 1 kHz dielectric constant value is 411 . 3 . At last, the formation process of ferroelectric films deposited by microarc oxidation was analyzed, possible chemical reactions of the film's growth were suggested. |
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