黄美东,许世鹏,刘野,薛利,潘玉鹏,范喜迎.负偏压对电弧离子镀复合TiAlN 薄膜的影响[J].表面技术,2012,(6):1-3,6.
HUANG Mei-dong,XU Shi-peng,LIU Ye,XUE Li,PAN Yu-peng,FAN Xi-ying.Influence of Negative Bias on TiAlN Films by Arc Ion Plating[J].Surface Technology,2012,(6):1-3,6 |
| 负偏压对电弧离子镀复合TiAlN 薄膜的影响 |
| Influence of Negative Bias on TiAlN Films by Arc Ion Plating |
| 投稿时间：2012-06-25 修订日期：2012-12-20 |
| DOI： |
| 中文关键词: 电弧离子镀 TiAlN 薄膜 负偏压 |
| 英文关键词:arc ion plating TiAlN thin film negative bias |
| 基金项目:国家自然科学基金(61078059); 天津师范大学创新计划项目(52X09038) |
| 作者 | 单位 |
| 黄美东 | 天津师范大学物理与电子信息学院, 天津300387) |
| 许世鹏 | 天津师范大学物理与电子信息学院, 天津300387) |
| 刘野 | 天津师范大学物理与电子信息学院, 天津300387) |
| 薛利 | 天津师范大学物理与电子信息学院, 天津300387) |
| 潘玉鹏 | 天津师范大学物理与电子信息学院, 天津300387) |
| 范喜迎 | 天津师范大学物理与电子信息学院, 天津300387) |
|
| Author | Institution |
| HUANG Mei-dong | College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300387, China |
| XU Shi-peng | College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300387, China |
| LIU Ye | College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300387, China |
| XUE Li | College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300387, China |
| PAN Yu-peng | College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300387, China |
| FAN Xi-ying | College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300387, China |
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| 中文摘要: |
| 采用电弧离子镀技术,以W18Cr4V 高速钢为基体,调整基体负偏压,制得多个复合TiAlN 薄膜试样,研究了基体负偏压对薄膜微观组织形貌、物相组成、晶格位向、硬度、厚度和沉积速率的影响。结果表明,过高或过低的负偏压会使得膜层表面不平整,显微硬度下降。当负偏压为200 V 时,膜层的沉积速率最大;负偏压为150 V 时,有利于薄膜(111)晶面的择优取向生长,且TiAlN 膜的硬度最高。 |
| 英文摘要: |
| TiAlN thin films were fabricated via arc ion plating on the W18Cr4V high-speed steel under different negative biases. The influence of negative bias on the microstructure, phase, and crystalline orientation, hardness, and deposition rate of the films were investigated. The results show that the films have a coarse surface at too high or too low biases, resulting in lower hardness. The largest deposition rate is achieved at -200 V bias. The TiAlN thin film has a (111) preferred orientation when deposited at -150 V bias, where the largest hardness is achieved. |
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