樊丽红,王朝勇,路钟杰,关瑞红,姚宁.能量过滤磁控溅射低温沉积ITO 膜及其光电性能研究[J].表面技术,2012,(5):1-3.
FAN Li-hong,WANG Chao-yong,LU Zhong-jie,GUAN Rui-hong,YAO Ning.Photoelectric Properties of ITO Thin Film Deposited by Energy Filtered DC Magnetron Sputtering at Low Temperature[J].Surface Technology,2012,(5):1-3 |
| 能量过滤磁控溅射低温沉积ITO 膜及其光电性能研究 |
| Photoelectric Properties of ITO Thin Film Deposited by Energy Filtered DC Magnetron Sputtering at Low Temperature |
| 投稿时间：2012-05-13 修订日期：2012-10-20 |
| DOI： |
| 中文关键词: ITO 薄膜 能量过滤磁控溅射 光电性能 |
| 英文关键词:ITO thin films energy filtering magnetron sputtering photoelectric properties |
| 基金项目:国家自然科学基金资助项目(61076041) |
| 作者 | 单位 |
| 樊丽红 | 郑州大学物理工程学院,郑州450052 |
| 王朝勇 | 郑州大学物理工程学院,郑州450052 |
| 路钟杰 | 郑州大学物理工程学院,郑州450052 |
| 关瑞红 | 郑州大学物理工程学院,郑州450052 |
| 姚宁 | 郑州大学物理工程学院,郑州450052 |
|
| Author | Institution |
| FAN Li-hong | Physical Engineering College, Zhengzhou University, Zhengzhou 450052, China |
| WANG Chao-yong | Physical Engineering College, Zhengzhou University, Zhengzhou 450052, China |
| LU Zhong-jie | Physical Engineering College, Zhengzhou University, Zhengzhou 450052, China |
| GUAN Rui-hong | Physical Engineering College, Zhengzhou University, Zhengzhou 450052, China |
| YAO Ning | Physical Engineering College, Zhengzhou University, Zhengzhou 450052, China |
|
| 摘要点击次数: |
| 全文下载次数: |
| 中文摘要: |
| 利用能量过滤磁控溅射技术,于低温条件下,在玻璃衬底上制备ITO 薄膜,研究了过滤电极金属网栅目数、溅射功率、衬底温度对ITO 薄膜光电性能的影响。结果表明:在网栅目数为60目、衬底温度为81℃、溅射功率为165W 的条件下,所得ITO 薄膜的电阻率为4.9×10-4 Ω·cm,可见光区平均透过率达到87%。 |
| 英文摘要: |
| The indium tin oxide(ITO)thin films were deposited on glass substrates by energy filtering magnetron sputtering(EFMS)at low temperature. The effects of different filtering electrode mesh, sputtering power and the temperature of the substrates on the photoelectric properties of ITO films were studied. The results show that we can received the ITO thin films have a resistivity of 4.9×10-4 Ω·cm and transparency of 87% in the visible wavelength region, when the mesh of filtering electrode for 60 mesh, the temperature of the substrates for 81℃ and sputtering power for 165 W. |
| 查看全文 查看/发表评论 下载PDF阅读器 |
| 关闭 |
|
|
|
渝公网安备 50010702501715号