陈文革,张剑,熊斐,邵菲.磁控溅射法制备W-Cu薄膜的研究[J].表面技术,2012,(4):42-45.
CHEN Wen-ge,ZHANG Jian,XIONG Fei,SHAO Fe.Research on W-Cu Film by Magnetron Sputtering Technology[J].Surface Technology,2012,(4):42-45 |
| 磁控溅射法制备W-Cu薄膜的研究 |
| Research on W-Cu Film by Magnetron Sputtering Technology |
| 投稿时间：2012-04-14 修订日期：2012-08-20 |
| DOI： |
| 中文关键词: W-Cu薄膜 磁控溅射 单靶 双靶 |
| 英文关键词:W-Cu film magnetron sputtering single-target dual-target |
| 基金项目:陕西省教育厅自然科学基金资助项目(11JK0813) |
| 作者 | 单位 |
| 陈文革 | 西安理工大学材料科学与工程学院,西安710048 |
| 张剑 | 西安理工大学材料科学与工程学院,西安710048 |
| 熊斐 | 西安理工大学材料科学与工程学院,西安710048 |
| 邵菲 | 西安理工大学材料科学与工程学院,西安710048 |
|
| Author | Institution |
| CHEN Wen-ge | School of Materials Science and Engineering, Xi'an University of Technology, Xi'an 710048, China |
| ZHANG Jian | School of Materials Science and Engineering, Xi'an University of Technology, Xi'an 710048, China |
| XIONG Fei | School of Materials Science and Engineering, Xi'an University of Technology, Xi'an 710048, China |
| SHAO Fe | School of Materials Science and Engineering, Xi'an University of Technology, Xi'an 710048, China |
|
| 摘要点击次数: |
| 全文下载次数: |
| 中文摘要: |
| 采用W70Cu30单靶磁控溅射与纯W、纯Cu双靶磁控共溅两种工艺,在多种基材上制备W-Cu薄膜,分析了薄膜的宏观形貌和组织结构。分析结果表明:单靶磁控溅射时,控制靶电压520V,溅射电流0.8~1.2A,Ar气流量25mL/min(标准状态),可在玻璃基体上镀得W-Cu薄膜,但退火时如温度过高,会使W 和Cu两种元素原子偏聚加重;双靶磁控溅射时,控制Ar气流量20mL/min(标准状态),Cu靶电流0.7A,W 靶电流1.2A,溅射时间3600s,可在硅基和玻璃基上镀得W-Cu薄膜,但在石墨基体、陶瓷基体及45钢基体上的镀膜效果不理想。 |
| 英文摘要: |
| W-Cu films were prepared on a variety of substrate by single target magnetron sputtering of W70Cu30 and pure W, pure Cu dual-target magnetron co-sputtering two processes.The results show that when use the single target magnetron sputtering, the control target voltage is 520 V, sputtering current is 0.8~1.2 A, the gas flow of Ar is 25mL/min(standard state), the W-Cu film can be plated on a glass substrate. The annealing temperature is too high can also increase W and Cu atom segregation. With dual-target magnetron co-sputtering, the control Ar gas flow rate is 20 mL/min(standard state), Cu target current is 0.7 A, W target current is 1.2 A, sputtering time is 3600 s, W-Cu thin films are plated on the silicon and glass substrates, but the result is not ideal in the coating on the graphite matrix, ce-ramic matrix, and 45 steel substrate. |
| 查看全文 查看/发表评论 下载PDF阅读器 |
| 关闭 |
|
|
|
渝公网安备 50010702501715号