刘少兵,程绍娟,张颖,赵彦生.Al( OH)3改性纳米Si02表面的研究[J].表面技术,2008,37(4):23-25.
LIU Shao-bing,CHENG Shao-juan,ZHANG Ying,ZHAO Yan-sheng.Surface Modification of Nano-Si02 by Al( OH) 3[J].Surface Technology,2008,37(4):23-25 |
| Al( OH)3改性纳米Si02表面的研究 |
| Surface Modification of Nano-Si02 by Al( OH) 3 |
| 投稿时间：2008-04-28 修订日期：2008-08-10 |
| DOI： |
| 中文关键词: 纳米Si02 表面改性 表面包覆 相容性 非均匀成核法 |
| 英文关键词:Nano-Si02 Surface modification Surface coating Compatibility Heterogeneous nucleation |
| 基金项目: |
| 作者 | 单位 |
| 刘少兵 | 洛阳理工学院材料工程系，河南洛阳471023 |
| 程绍娟 | 洛阳理工学院材料工程系，河南洛阳471023 |
| 张颖 | 军械工程学院，河北石家庄050003 |
| 赵彦生 | 太原理工大学化学系，山西太原030024 |
|
| Author | Institution |
| LIU Shao-bing | Material Engineering Department of Luoyang Institute of Technology, Luoyang 471023, China |
| CHENG Shao-juan | Material Engineering Department of Luoyang Institute of Technology, Luoyang 471023, China |
| ZHANG Ying | Ordnance Engineering College, Shijiazhuang 050003, China |
| ZHAO Yan-sheng | Taiyuan University of Technology, Taiyuan 030024, China |
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| 摘要点击次数: |
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| 中文摘要: |
| 纳米Si02是一种应用广泛、性能优异的无机材料。为了降低纳米二氧化硅的亲水性，提高亲油性，增强其与有机基体的相容性，从而充分发挥纳米Si02的纳米效应，需要对纳米Si02的表面进行改性。通过非均匀成核法，采用Al( OH)3对纳米Si02表面包覆改性以改善纳米Si02的表面结构和性能。使用IR、XPS、XRD和Malvem Zetasize 3000HSA自动电位粒度仪等表征手段，对表面包覆改性后纳米Si02的结构及等电点等进行了测试和分析。结果分析表明：Al( OH)3以无定形结构成功地包覆在纳米Si02表面，包覆后的纳米Si02仍为无定形结构，但其等电点(IPE)的pH值从2.3变为7.1。 |
| 英文摘要: |
| Nano-Si02 is an inorganic materials with excellent properties and widely uses. In order to reduce the hydrophilicity, increase the hydrophobicity and improve the compatibility between organic matrix and nano-Si02 to make full use of its nano advantage, its surface need to be modified. Nano-Si02 surface was modified by Al( OH) 3 from heterogeneous nucleation process to improve the surface structures and properties. The surface structure and the zeta potential of nano-Si02 were characterized by IR, XPS, XRD and Malvern Instruments Zetasize Systems. The results indicate that nano-Si02 is successfully coated by amorphous Al( OH) 3 . After surface coating nano-Si02 is still amorphous and the isoelectric point of Si02 is changed from pH 2. 3 t0 7. 1. |
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