刘思用,林立,杨武保,孙惠峰.AIN薄膜的离子反应镀工艺优化及分析[J].表面技术,2007,36(3):37-39.
LIU Si-yong,LIN Li,YANG Wu-bao,SUN Hui-feng.Technology Optimization of Reactive Ion Plating for AIN Film and Its Analysis[J].Surface Technology,2007,36(3):37-39 |
| AIN薄膜的离子反应镀工艺优化及分析 |
| Technology Optimization of Reactive Ion Plating for AIN Film and Its Analysis |
| 投稿时间：2007-03-05 修订日期：2007-06-10 |
| DOI： |
| 中文关键词: 氮化铝 薄膜 离子反应镀 工艺优化 |
| 英文关键词:AIN Film Reactive ion plating Technology optimization |
| 基金项目: |
| 作者 | 单位 |
| 刘思用 | 中国石油大学（北京）机电工程学院材料系，北京102249 |
| 林立 | 中国石油大学（北京）机电工程学院材料系，北京102249 |
| 杨武保 | 中国石油大学（北京）机电工程学院材料系，北京102249 |
| 孙惠峰 | 中国石油大学（北京）机电工程学院材料系，北京102249 |
|
| Author | Institution |
| LIU Si-yong | Material Department of Electromechanical and Engineering College ,China University of Petroleum( Beijing) , Beijing 102249 , China |
| LIN Li | Material Department of Electromechanical and Engineering College ,China University of Petroleum( Beijing) , Beijing 102249 , China |
| YANG Wu-bao | Material Department of Electromechanical and Engineering College ,China University of Petroleum( Beijing) , Beijing 102249 , China |
| SUN Hui-feng | Material Department of Electromechanical and Engineering College ,China University of Petroleum( Beijing) , Beijing 102249 , China |
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| 中文摘要: |
| 利用高纯氮气和铝，采用离子反应镀的方法，在石英玻璃衬底上成功制得AIN薄膜。正交设计优化结果表明：AIN薄膜最大沉积速率达到0. 81斗m/min，其相应的工艺参数为：蒸发电压225V，轰击电压70V，轰击时N2气压为1. 5999Pa。X-射线衍射、原子力显微镜、近红外光谱、拉曼光谱对薄膜进行了分析，证明了AIN薄膜的存在。 |
| 英文摘要: |
| AIN film was produced on glass with high-pure N2 and Al by reactive ion plating. The result of orthogonal design indicates that the largest deposited speed is about 0. 8lym/min , its technology parameters are like this : the evaporating voltage is 225V, the bombarding voltage is 70V, the vacuum degree is l. 2 x 10-2torr. The film was analyzed by XRD, AFM, near infrared spectrum, and Raman spectrum, which ensured the AIN films presence. |
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