XIAO Jin,ZHAI Qian,ZHOU Yan-qiong,LI Wu-chu,CHEN Ji-song,WANG Chao-chao.Ultrasonic Assisted Transient Solid Phase Bonding Technology Based on Copper-indium Micro Nano Layer at Room Temperature[J],51(12):312-319
Ultrasonic Assisted Transient Solid Phase Bonding Technology Based on Copper-indium Micro Nano Layer at Room Temperature
  
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DOI:10.16490/j.cnki.issn.1001-3660.2022.12.032
KeyWord:metal material  solid phase bonding  Cu-In micro nano  bonding strength  diffusion
                 
AuthorInstitution
XIAO Jin Guangzhou Huali College, Guangzhou , China
ZHAI Qian Guangzhou Huali College, Guangzhou , China
ZHOU Yan-qiong Guangzhou Huali College, Guangzhou , China
LI Wu-chu Guangzhou Huali College, Guangzhou , China
CHEN Ji-song Guangzhou Huali College, Guangzhou , China
WANG Chao-chao Guangzhou Huali College, Guangzhou , China
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Abstract:
      High density three-dimensional lamination technology is the development trend of electronic packaging technology. With the thickness and spacing of chips becoming smaller and smaller, in order to solve the problem of high thermal stress caused by high temperature and aggravating signal delay in traditional reflow soldering process, the work aims to adopt the needle shaped copper-indium micro nano layer and ultrasonic assistance to realize bonding and interconnection at room temperature to ensure the reliability of interconnection. Ultrasonic assisted bonding technology refers to the bonding of metals on both sides under the action of ultrasonic and pressure, which can realize the low-temperature bonding between chips in a very short bonding time. The bonding pressure is small. Compared with the traditional hot pressing bonding, it reduces the damage of hot pressing to the chip and improves the reliability of the package.
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