| YANG Meng-xiong,HUI Ying-xue.Comparison of Magnetron Sputtering Process of Silicon Carbide Film Based on Silicon and Silicon Carbide Target[J],50(9):134-140 |
| Comparison of Magnetron Sputtering Process of Silicon Carbide Film Based on Silicon and Silicon Carbide Target |
| Received:October 05, 2020 Revised:March 09, 2021 |
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| DOI：10.16490/j.cnki.issn.1001-3660.2021.09.013 |
| KeyWord:magnetron sputtering silicon carbide deposition rate surface roughness reactive gas |
| Author | Institution |
| YANG Meng-xiong |
Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi’an Technological University, Xi’an , China |
| HUI Ying-xue |
Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi’an Technological University, Xi’an , China |
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| Abstract: |
| Through direct magnetron sputtering based on silicon carbide ceramic target and reactive magnetron sputtering based on silicon target and methane, silicon carbide film is deposited on Si(100) substrate. This paper studies and compares the similarities and differences of silicon carbide film prepared by the two processes. Silicon carbide film is produced through direct and reactive magnetron sputtering. The film roughness, thickness, deposition rate, composition are analyzed by white light interferometer, profiler, XPS (X-ray photoelectron spectroscopy), and the phase structure and morphology of the film are analyzed by X-ray diffractometer and scanning electron microscope. The experiment shows that based on the reactive sputtering process of silicon target and methane, the deposition rate increases from 11.3 nm/min to 36.5 nm/min between 20% and 70% methane percentage, and the surface roughness Rq value changes a little between 20% and 60% methane percentage, but there is a tendency to increase at 70%. In the methane reactive sputtering process, the ratio of silicon to carbon is adjustable, but the methane gas is not easy to control; in the silicon carbide ceramic target sputtering process, the surface roughness Rq does not change much with the deposition time or the thickness of the film. The ratio of silicon to carbon is close to 1:1. The films prepared by the two processes are all crystalline and 8H-SiC. Comparing the two processes, the deposition rate of reactive sputtering of silicon target is significantly faster than that of silicon carbide ceramic target under the same target power. For silicon target reactive sputtering, the element ratio is adjustable, but the methane gas is not easy to control. For the silicon carbide ceramic target, the deposition process is stable, and the silicon carbon element ratio is close to 1:1. |
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