| LI Xiao-hui,SONG Kai-qiang,CONG Da-long,ZHANG Min,SUN Cai-yun,WU Hu-lin,LI Zhong-sheng.Preparation and Photoelectric Properties of ITO Thin Films with High Transparency and Low Emissivity[J],49(7):126-132 |
| Preparation and Photoelectric Properties of ITO Thin Films with High Transparency and Low Emissivity |
| Received:February 26, 2020 Revised:July 20, 2020 |
| View Full Text View/Add Comment Download reader |
| DOI：10.16490/j.cnki.issn.1001-3660.2020.07.016 |
| KeyWord:magnetron sputtering ITO thin film transmittance square resistance emissivity |
| Author | Institution |
| LI Xiao-hui |
Southwest Institute of Technology and Engineering, Chongqing , China |
| SONG Kai-qiang |
Southwest Institute of Technology and Engineering, Chongqing , China |
| CONG Da-long |
Southwest Institute of Technology and Engineering, Chongqing , China |
| ZHANG Min |
Southwest Institute of Technology and Engineering, Chongqing , China |
| SUN Cai-yun |
Southwest Institute of Technology and Engineering, Chongqing , China |
| WU Hu-lin |
Southwest Institute of Technology and Engineering, Chongqing , China |
| LI Zhong-sheng |
Southwest Institute of Technology and Engineering, Chongqing , China |
|
| Hits: |
| Download times: |
| Abstract: |
| The work aims to study the influence of magnetron sputtering technology on the photoelectric properties of ITO thin films, so as to provide data and theoretical support for the preparation of high-performance ITO thin films. The ITO thin film was prepared by magnetron sputtering on PET substrate, and the effects of process parameters on the photoelectric properties of ITO thin film were analyzed by scanning electron microscope, X-ray diffractometer, spectrophotometer, four- probe, infrared emittance meter, Hall effect test system, etc. With the increase of oxygen flow, the transmittance of ITO thin film firstly increased and then slowed down in visible light region, and the block resistance of the thin film firstly decreased and then increased. With the increase of working pressure, the visible light transmittance of ITO thin film increased, the block resistance firstly decreased and then increased, the resistance firstly decreased and then increased, the carrier concentration firstly increased and then decreased, the infrared emissivity firstly decreased and then increased, and the crystal structure gradually changed from crystal state to amorphous state. With the decrease of the argon-oxygen ratio, the infrared emissivity of the thin film decreased firstly and then increased slowly. With the increase of sputtering time, the thickness of the thin film increased gradually, the block resistance, infrared emissivity and visible light transmittance decreased rapidly, and the crystal structure gradually changed from amorphous structure to crystal structure. From the comprehensive comparative study, when the oxygen flow rate was 0.6 mL/min, the working pressure was 0.4 Pa, the argon-oxygen ratio was 19.8∶0.2, and the sputtering time was 80 min, the ITO thin film with excellent comprehensive performance could be obtained, with the visible light transmittance greater than 80% and the emissivity less than 0.2 in the infrared band of 8~14 μm. Magnetron sputtering process parameters are important factors to determine the comprehensive quality of thin films. By strictly controlling the process parameters, ITO thin films with high transparency and low emissivity can be obtained. |
| Close |
|
|
|