ZHOU Yue,WANG Yu-ting,YI Fu-ting,WANG Bo,LIU Jing,ZHANG Tian-chong.Development and Performance of Equipment for Polishing Inside Walls of Micro-holes Based on Magnetic-field-assisted Polishing Technology[J],47(6):252-257
Development and Performance of Equipment for Polishing Inside Walls of Micro-holes Based on Magnetic-field-assisted Polishing Technology
Received:December 08, 2017  Revised:June 20, 2018
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DOI:10.16490/j.cnki.issn.1001-3660.2018.06.036
KeyWord:magnetic-field-assisted polishing technology  polishing inside walls of micro-holes  polishing equipment  magnetic flux density  roughness
                 
AuthorInstitution
ZHOU Yue 1.Institute of High Energy Physics, Chinese Academy of Sciences, Beijing , China; 2.University of Chinese Academy of Sciences, Beijing , China
WANG Yu-ting Institute of High Energy Physics, Chinese Academy of Sciences, Beijing , China
YI Fu-ting Institute of High Energy Physics, Chinese Academy of Sciences, Beijing , China
WANG Bo Institute of High Energy Physics, Chinese Academy of Sciences, Beijing , China
LIU Jing Institute of High Energy Physics, Chinese Academy of Sciences, Beijing , China
ZHANG Tian-chong Institute of High Energy Physics, Chinese Academy of Sciences, Beijing , China
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Abstract:
      The work aims to develop equipment for polishing inside walls of micro-holes based on magnetic-field-assisted polishing technology. The polishing equipment applicable to inside walls of micro-holes was designed and developed by utilizing properties of magnetic-field-assisted polishing solution and drawing on traditional polishing theory. Based upon this polishing equipment, a series of performance studies were performed to the equipment. Polishing studies were applied to porous nickel samples and normal silicon wafers under different conditions, and polishing results were analyzed. Performance study results of the polishing equipment showed that stable gradient alternating magnetic field was generated by the equipment, which coincided with our expectation and could be used for further studies of sample polishing. Though the equipment had no obvious effect on polishing of porous nickel samples, the roughness of silicon wafers decreased from 1.24 nm to 0.56 nm. Polishing studies of silicon wafers showed that the roughness decreased as time advanced. The self-made equipment for polishing inside walls of micro-holes based on magnetic-field-assisted polishing technology can be used for polishing silicon wafers. The relationship between polishing effect and magnetic field control parameters can be explored subsequently, and the polishing equipment can be applied to polishing of samples with micro-hole structure step by step.
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