李惠琴,陈晓勇,王成,穆继亮,许卓,杨杰,丑修建,薛晨阳,刘俊.原子层沉积技术在微纳器件中的应用研究进展[J].表面技术,2015,44(2):60-67.
LI Hui-qin,CHEN Xiao-yong,WANG Cheng,MU Ji-liang,XU Zhuo,YANG Jie,CHOU Xiu-jian,XUE Chen-yang,LIU Jun.Progress in Application Research of Atomic Layer Deposition in Micro-nano Devices Field[J].Surface Technology,2015,44(2):60-67 |
| 原子层沉积技术在微纳器件中的应用研究进展 |
| Progress in Application Research of Atomic Layer Deposition in Micro-nano Devices Field |
| 投稿时间：2014-12-08 修订日期：2015-02-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2015.02.012 |
| 中文关键词: 原子层沉积 薄膜技术 高深宽比结构 纳米多孔结构 微纳结构器件 |
| 英文关键词:atomic layer deposition thin-film preparation technology high aspect-ratio structure nano-porous structure micro-nano structure devices |
| 基金项目:国家自然科学基金重点支持项目(91123036);国家自然科学基金杰出青年基金(51225504);国家自然科学基金(91123016) |
| 作者 | 单位 |
| 李惠琴 | 1. 中北大学 仪器科学与动态测试教育部重点实验室, 太原 030051;2. 中北大学 电子测试技术重点实验室, 太原 030051 |
| 陈晓勇 | 1. 中北大学 仪器科学与动态测试教育部重点实验室, 太原 030051;2. 中北大学 电子测试技术重点实验室, 太原 030051 |
| 王成 | 1. 中北大学 仪器科学与动态测试教育部重点实验室, 太原 030051;2. 中北大学 电子测试技术重点实验室, 太原 030051 |
| 穆继亮 | 1. 中北大学 仪器科学与动态测试教育部重点实验室, 太原 030051;2. 中北大学 电子测试技术重点实验室, 太原 030051 |
| 许卓 | 中北大学 仪器科学与动态测试教育部重点实验室, 太原 030051 |
| 杨杰 | 中北大学 电子测试技术重点实验室, 太原 030051 |
| 丑修建 | 1. 中北大学 仪器科学与动态测试教育部重点实验室, 太原 030051;2. 中北大学 电子测试技术重点实验室, 太原 030051 |
| 薛晨阳 | 1. 中北大学 仪器科学与动态测试教育部重点实验室, 太原 030051;2. 中北大学 电子测试技术重点实验室, 太原 030051 |
| 刘俊 | 1. 中北大学 仪器科学与动态测试教育部重点实验室, 太原 030051;2. 中北大学 电子测试技术重点实验室, 太原 030051 |
|
| Author | Institution |
| LI Hui-qin | 1. Key Laboratory of Instrumentation Science & Dynamic Measurement (Ministry of Education),North University of China, Taiyuan 030051, China; 2. Key Laboratory of Science and Technology on Electronic Test & Measurement, North University of China, Taiyuan 030051, China |
| CHEN Xiao-yong | 1. Key Laboratory of Instrumentation Science & Dynamic Measurement (Ministry of Education),North University of China, Taiyuan 030051, China; 2. Key Laboratory of Science and Technology on Electronic Test & Measurement, North University of China, Taiyuan 030051, China |
| WANG Cheng | 1. Key Laboratory of Instrumentation Science & Dynamic Measurement (Ministry of Education),North University of China, Taiyuan 030051, China; 2. Key Laboratory of Science and Technology on Electronic Test & Measurement, North University of China, Taiyuan 030051, China |
| MU Ji-liang | 1. Key Laboratory of Instrumentation Science & Dynamic Measurement (Ministry of Education),North University of China, Taiyuan 030051, China; 2. Key Laboratory of Science and Technology on Electronic Test & Measurement, North University of China, Taiyuan 030051, China |
| XU Zhuo | Key Laboratory of Instrumentation Science & Dynamic Measurement (Ministry of Education),North University of China, Taiyuan 030051, China; |
| YANG Jie | Key Laboratory of Science and Technology on Electronic Test & Measurement, North University of China, Taiyuan 030051, China |
| CHOU Xiu-jian | 1. Key Laboratory of Instrumentation Science & Dynamic Measurement (Ministry of Education),North University of China, Taiyuan 030051, China; 2. Key Laboratory of Science and Technology on Electronic Test & Measurement, North University of China, Taiyuan 030051, China |
| XUE Chen-yang | 1. Key Laboratory of Instrumentation Science & Dynamic Measurement (Ministry of Education),North University of China, Taiyuan 030051, China; 2. Key Laboratory of Science and Technology on Electronic Test & Measurement, North University of China, Taiyuan 030051, China |
| LIU Jun | 1. Key Laboratory of Instrumentation Science & Dynamic Measurement (Ministry of Education),North University of China, Taiyuan 030051, China; 2. Key Laboratory of Science and Technology on Electronic Test & Measurement, North University of China, Taiyuan 030051, China |
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| 中文摘要: |
| 原子层沉积(ALD)是一种新型的精确表层薄膜制备技术, 具有沉积面积大、薄膜均匀、膜厚纳米级可控生长、低温性等特点,适用于纳米多孔和高深宽比基底材料,可应用于三维微纳结构器件的功能薄膜材料制备,广受国内外学术界和工业界的关注。 综述了 ALD 技术发展历史和技术原理,介绍了 ALD 技术在微纳器件中的应用进展,涉及半导体微纳集成电路、微纳光学器件、微纳米生物医药等高新技术领域,对 ALD 技术当前存在的问题进行了分析,并展望了未来发展方向。 |
| 英文摘要: |
| Atomic layer deposition (ALD) is a new type of accurate surface thin film preparation technique, which has several characteristics such as depositing large-area uniform films, making the film thickness control at nanometer level feasible, and lower deposition temperature. This new technique is suitable for the complicated nano-porous and high aspect ratio substrate materials, and can be applied in the preparation of functional film materials for 3D micro-nano devices. Now great attention of widespread academic and industry has been paid to ALD technology. The development history and related working principles of ALD technology were reviewed in this paper. Especially, the application progress of ALD technique in the micro-nano devices, including semiconductor integrated circuit, micro and nano optics and biomedical field, was introduced in the paper. Meanwhile, the existing problems of ALD technique and its future development tendency were discussed. |
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