熊伟,储向峰,白林山,董永平,叶明富.GaN基LED衬底材料化学机械抛光研究进展[J].表面技术,2014,43(1):125-130.
XIONG Wei,CHU Xiang-feng,BAI Lin-shan,DONG Yong-ping,YE Ming-fu.Research Progress of Chemical Mechanical Polishing of Substrates Used[J].Surface Technology,2014,43(1):125-130
GaN基LED衬底材料化学机械抛光研究进展
Research Progress of Chemical Mechanical Polishing of Substrates Used
投稿时间:2013-10-14  修订日期:2013-11-22
DOI:
中文关键词:  衬底材料  化学机械抛光  抛光工艺  抛光浆料
英文关键词:substrate materials  chemical mechanical polishing  polishing process  polishing slurry
基金项目:安徽工业大学研究生创新基金(2012029)
作者单位
熊伟 安徽工业大学 化学化工学院, 安徽 马鞍山 243002 
储向峰 安徽工业大学 化学化工学院, 安徽 马鞍山 243002 
白林山 安徽工业大学 化学化工学院, 安徽 马鞍山 243002 
董永平 安徽工业大学 化学化工学院, 安徽 马鞍山 243002 
叶明富 安徽工业大学 化学化工学院, 安徽 马鞍山 243002 
AuthorInstitution
XIONG Wei School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan 243002, China 
CHU Xiang-feng School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan 243002, China 
BAI Lin-shan School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan 243002, China 
DONG Yong-ping School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan 243002, China 
YE Ming-fu School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan 243002, China 
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中文摘要:
      概述了化学机械抛光作用机制,着重阐述了 3 种常见衬底( α-Al2O3,SiC,Si ) 的化学机械抛光现状,主要从抛光工艺参数和抛光液组成( 不同磨料、磨料粒径、氧化剂、络合剂、pH 值等) 对晶片抛光效果的影响展开研究,并指出了目前化学机械抛光存在的问题,进一步展望了 LED 衬底化学机械抛光的发展前景。
英文摘要:
      In this paper, the mechanism of chemical mechanical polishing ( CMP ) was summarized. The development of chemical mechanical polishing of three kinds of substrates ( α-Al2O3, SiC, Si) were introduced. The study was mainly focused on the effects of the polishing process parameters and the composition of the polishing slurry ( different abrasive, abrasive particle size, oxidizing agent, chelating agent and pH value, etc) on wafer polishing, and the existing problems of CMP were pointed out. Finally,the future prospect of CMP of LED substrate was outlined.
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