张艳茹,杭凌侠,郭峰,宁晓阳.直流反应磁控溅射制备 a-C:H 薄膜及其表面粗糙度研究[J].表面技术,2013,42(2):92-94,121.
ZHANG Yan-ru,HANG Ling-xia,GUO Feng,NING Xiao-yang.Study on Deposition of a-C:H Film by Reactive DC Magnetron Sputtering and Its Surface Roughness[J].Surface Technology,2013,42(2):92-94,121
直流反应磁控溅射制备 a-C:H 薄膜及其表面粗糙度研究
Study on Deposition of a-C:H Film by Reactive DC Magnetron Sputtering and Its Surface Roughness
投稿时间:2012-11-15  修订日期:2012-12-29
DOI:
中文关键词:  直流反应磁控溅射  含氢类金刚石薄膜  沉积速率  表面粗糙度
英文关键词:reactive DC magnetron sputtering  DLC films with various hydrogen contents  deposition rate  surfaceroughness
基金项目:陕西省教育厅科学研究计划项目(12JK0433)
作者单位
张艳茹 西安工业大学 陕西省薄膜技术与光学检测重点实验室, 西安 710032 
杭凌侠 西安工业大学 陕西省薄膜技术与光学检测重点实验室, 西安 710032 
郭峰 西安工业大学 陕西省薄膜技术与光学检测重点实验室, 西安 710032 
宁晓阳 西安工业大学 陕西省薄膜技术与光学检测重点实验室, 西安 710032 
AuthorInstitution
ZHANG Yan-ru Key Laboratory of Thin Film Technology and Optical Test of Shaanxi Province,Xi'an Technological University, Xi'an 710032 , China 
HANG Ling-xia Key Laboratory of Thin Film Technology and Optical Test of Shaanxi Province,Xi'an Technological University, Xi'an 710032 , China 
GUO Feng Key Laboratory of Thin Film Technology and Optical Test of Shaanxi Province,Xi'an Technological University, Xi'an 710032 , China 
NING Xiao-yang Key Laboratory of Thin Film Technology and Optical Test of Shaanxi Province,Xi'an Technological University, Xi'an 710032 , China 
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中文摘要:
      为研究含氢类金刚石( a-C: H) 薄膜的制备及性能, 充入含—CH3 原子团的 CH4 气体, 在不同CH4/ Ar 流量比条件下于 N 型硅基底上沉积 a-C:H 薄膜,并借助椭偏仪、非接触式白光干涉仪及激光波面干涉仪对薄膜的沉积速率及表面粗糙度进行测定。 结果表明,含氢碳源气体的加入提高了类金刚石薄膜的沉积速率,改善了表面平整度。
英文摘要:
      The —CH3 atoms methane gas was filled to study the preparation and performance of the hydrogen-containing DLC( a-C:H) thin film. At different CH4 / Ar flow ratio condition, the a-C:H was deposited on the N type silicon substrate. By means of ellipsometer, the non-contact white light interferometer as well as the laser wave interferometer, the deposition rate and surface roughness were lucubrated. Experiment results show that the deposition rate of the diamond-like carbon thin film is enhanced by the addition of the hydrogen-containing carbon gas and the surface flatness is also improved.
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