张炜,刘涛,何家乐,张家发,张宇梁,龙江游,谢小柱.飞秒激光全划切超薄碳化硅基片[J].表面技术,2023,52(1):306-313.
ZHANG Wei,LIU Tao,HE Jia-le,ZHANG Jia-fa,ZHANG Yu-liang,LONG Jiang-you,XIE Xiao-zhu.Full Dicing of Ultra-thin Silicon Carbide Substrate by Femtosecond Laser[J].Surface Technology,2023,52(1):306-313
飞秒激光全划切超薄碳化硅基片
Full Dicing of Ultra-thin Silicon Carbide Substrate by Femtosecond Laser
  
DOI:10.16490/j.cnki.issn.1001-3660.2023.01.031
中文关键词:  激光切割  超薄碳化硅  红外飞秒激光  断面形貌  粗糙度测试  强度测试
英文关键词:laser dicing  ultra-thin silicon carbide  infrared femtosecond laser  section morphology  surface roughness test  bending strength test
基金项目:广东省基础与应用基础研究基金区域联合基金重点项目(2020B1515120058);国家自然科学基金(52075103)
作者单位
张炜 广东工业大学 机电工程学院 激光微纳加工研究中心,广州 51000 
刘涛 广东工业大学 机电工程学院 激光微纳加工研究中心,广州 51000 
何家乐 广东工业大学 机电工程学院 激光微纳加工研究中心,广州 51000 
张家发 广东工业大学 机电工程学院 激光微纳加工研究中心,广州 51000 
张宇梁 广东工业大学 机电工程学院 激光微纳加工研究中心,广州 51000 
龙江游 广东工业大学 机电工程学院 激光微纳加工研究中心,广州 51000;广东工业大学 省部共建精密电子制造技术与装备国家重点实验室,广州 51000 
谢小柱 广东工业大学 机电工程学院 激光微纳加工研究中心,广州 51000;广东工业大学 省部共建精密电子制造技术与装备国家重点实验室,广州 51000 ;广东工业大学 实验教学部,广州 510006 
AuthorInstitution
ZHANG Wei Laser Micro/Nano Processing Lab,Guangzhou 510006, china 
LIU Tao Laser Micro/Nano Processing Lab,Guangzhou 510006, china 
HE Jia-le Laser Micro/Nano Processing Lab,Guangzhou 510006, china 
ZHANG Jia-fa Laser Micro/Nano Processing Lab,Guangzhou 510006, china 
ZHANG Yu-liang Laser Micro/Nano Processing Lab,Guangzhou 510006, china 
LONG Jiang-you Laser Micro/Nano Processing Lab,Guangzhou 510006, china ;State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment,Guangzhou 510006, china 
XIE Xiao-zhu Laser Micro/Nano Processing Lab,Guangzhou 510006, china ;State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment,Guangzhou 510006, china ;Department of Experiment Teaching, School of Electromechanial Engineering,Guangdong University of Technology, Guangzhou 510006, china 
摘要点击次数:
全文下载次数:
中文摘要:
      目的 为实现超薄碳化硅基片全划切,需在加工出窄线宽(小于25 μm)的切割槽的同时保证基片的强度。方法 使用波长为1 030 nm的红外飞秒激光对碳化硅基片进行全划切加工,通过扫描电子显微镜和光学显微镜分析脉冲重复频率、脉冲能量、切割速度和扫描次数对切口宽度、深度以及断面形貌的影响,采用能谱仪对不同脉冲能量下的划切断面进行微区元素分析,采用激光共聚焦显微镜测量划切断面粗糙度,以及采用电子万能实验机测试划切样品的抗弯强度。结果 划切断面的元素主要有Si、C、O 3种,O元素富集在断面的上下边缘位置。SiO2颗粒喷溅重沉积影响断面微纳结构。断面的粗糙度随脉冲能量的增强而上升,基片强度反而下降。在激光脉冲能量为3.08 μJ、脉冲重复频率为610 kHz、切割速度为4 mm/s、切割12次的条件下,可以加工出宽度为15 μm、深度高于100 μm的良好切割槽,断面粗糙度为296 nm,基片抗弯强度为364 MPa。结论 切割槽宽度和深度与脉冲重复频率、脉冲能量、切割速度和扫描次数有关。O元素的分布说明存在SiO2堆积在断面上下边缘部分的现象。使用小脉冲能量激光进行划切,可以减少SiO2颗粒喷溅重沉积,从而使断面出现大量熔块状结构,得到粗糙度较低的断面形貌。断面粗糙度降低,意味着划切断面存在的微裂纹等缺陷减少,从而使强度上升。本试验最终采用较优激光划切工艺参数,实现了飞秒激光全划切超薄SiC基片,槽宽仅为15 μm。由于短脉宽小脉冲能量高重复频率激光的作用以及激光辐射下SiC材料的相分离机制,基片划切断面烧蚀形貌良好,且抗弯强度较好。
英文摘要:
      To achieve full dicing of ultra-thin silicon carbide substrate in this paper, it is necessary to attain a narrow grooves (<25 μm) with high quality while ensuring bending strength of substrate after dicing. The silicon carbide substrate was full diced by femtosecond laser with the wavelength of 1 030 nm. The effects of pulse repetition rate, pulse energy, dicing speed and scanning times on the groove width, groove depth and section morphology were analyzed by scanning electron microscope and optical microscopy. The microelement analysis of the section surface under different pulse energy was carried out by energy dispersive spectrometer, the surface roughness was measured by laser scanning confocal microscope, and the bending strength of substrate were tested by electronic universal testing machine. The results show that there were mainly three elements in the groove section, including Si, C and O. O element is enriched at the edge of the section. The micro/nano structure of the cross section was affected by sputtering and redeposition of SiO2 particle. Different size structure occurred for using diverse pulse energy. The surface roughness of the section increased with the enhancement of pulse energy, whereas the strength decreased according to the three point bend testing. A better groove with the width of 15 μm and depth greater than 100 μm was obtained by pulse energy of 3.08 μJ, pulse repetition rate of 610 kHz, dicing speed of 4 mm/s and scanning times of 12. The surface roughness of section was 296 nm and the bending strength of substrate was 364 MPa. It can be concluded that the width and depth of the cutting groove are related to the process parameters of pulse repetition rate, pulse energy, dicing speed and scanning times. The scanning time plays the most important role in the cutting depth. The main factor which affects the cutting width is the pulse energy, followed by the cutting speed. The distribution of O element indicates that SiO2 is accumulated at the edges of the section. Low pulse energy of laser is conductive to the dicing of substrate, for it can decrease the sputtering and redeposition of SiO2 particle which enables the formation of a large number of the melted block structure and low surface roughness of the section. With the reduction in section roughness which means the less defects such as micro-cracks in the fracture surface, the bending strength augments. Excessive pulse energy will cause over-ablation in the section, and the severe redeposition of SiO2 particles will give rise to the roughness of the section. Using the excellent processing parameters in laser dicing, the silicon carbide substrate can be full diced by femtosecond laser with a 15 μm-wide groove. For the ultra-short laser with low pulse energy and high pulse repetition ratio is used and the phase separation phenomenon of SiC materials under the laser radiation exists, the high quality of ablation section morphology and the excellent bending stress of substrate can be attained.
查看全文  查看/发表评论  下载PDF阅读器
关闭

关于我们 | 联系我们 | 投诉建议 | 隐私保护 | 用户协议

您是第19916867位访问者    渝ICP备15012534号-3

版权所有:《表面技术》编辑部 2014 surface-techj.com, All Rights Reserved

邮编:400039 电话:023-68792193传真:023-68792396 Email: bmjs@surface-techj.com

渝公网安备 50010702501715号