耿传文,赵鹏,张晓东,曾梅花,Miroljub Vilotijevic.金刚石薄膜在第一壁材料表面的应力研究[J].表面技术,2022,51(10):243-249.
GENG Chuan-wen,ZHAO Peng,ZHANG Xiao-dong,ZENG Mei-hua,Miroljub,Vilotijevic.The Stress of Diamond Films on the Surface of the First Wall Material[J].Surface Technology,2022,51(10):243-249
金刚石薄膜在第一壁材料表面的应力研究
The Stress of Diamond Films on the Surface of the First Wall Material
  
DOI:10.16490/j.cnki.issn.1001-3660.2022.10.025
中文关键词:  金刚石薄膜  第一壁材料  应力  等离子体  钨穿管部件
英文关键词:diamond films  the first wall material  stress  plasma  W mono-blocks
基金项目:国家自然科学基金(11775271)
作者单位
耿传文 中国科学院合肥物质科学研究院,安徽 合肥 230031;中国科学技术大学,安徽 合肥 230026 
赵鹏 中国科学院合肥物质科学研究院,安徽 合肥 230031 
张晓东 中国科学院合肥物质科学研究院,安徽 合肥 230031 
曾梅花 中国科学院合肥物质科学研究院,安徽 合肥 230031 
Miroljub Vilotijevic 中国科学院合肥物质科学研究院,安徽 合肥 230031 
AuthorInstitution
GENG Chuan-wen Hefei Institutes of Physical Science, Chinese Academy of Sciences, AnHui Hefei 230031, China;University of Science and Technology of China, AnHui Hefei 230026, China 
ZHAO Peng Hefei Institutes of Physical Science, Chinese Academy of Sciences, AnHui Hefei 230031, China 
ZHANG Xiao-dong Hefei Institutes of Physical Science, Chinese Academy of Sciences, AnHui Hefei 230031, China 
ZENG Mei-hua Hefei Institutes of Physical Science, Chinese Academy of Sciences, AnHui Hefei 230031, China 
Miroljub,Vilotijevic Hefei Institutes of Physical Science, Chinese Academy of Sciences, AnHui Hefei 230031, China 
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中文摘要:
      目的 提出在第一壁材料(钨穿管部件)表面沉积金刚石薄膜,并系统研究金刚石薄膜厚度对应力的影响。方法 采用数值模拟和实验表征方法。利用ANSYS workbench模拟软件,在建立钨穿管部件表面金刚石薄膜有限元模型及模型方程的基础上,对影响金刚石薄膜热残余应力的厚度因素进行探讨;采用微波等离子体化学气相沉积法(MPCVD),在钨穿管部件表面沉积不同厚度的金刚石薄膜,并利用拉曼光谱法和洛氏硬度计压痕法对薄膜的应力进行表征。结果 模拟显示,随着金刚石薄膜厚度增加,薄膜最大主应力值和最大剪应力值均呈现出先减少后增加趋势,在薄膜厚度为75~100 μm时处于最低,小于金刚石薄膜通常的断裂强度(700 MPa),同时最大应力落差区域出现在薄膜边缘处。通过实验表征得到金刚石薄膜表面呈现出拉应力,在薄膜厚度为(103.56±0.5)μm时,金刚石薄膜中间区域应力值最低,与VDI3198标准对比,压痕坑达到HF1和HF2效果。结论 钨穿管部件表面金刚石薄膜厚度为(103.56±0.5)μm时,不容易出现裂纹和与基底的剥离现象,具有较好的附着性。
英文摘要:
      This paper proposes to deposit a diamond films on the surface of the first wall material (W mono-blocks), and through numerical simulation and experimental characterization, the effect of diamond films thickness on stress is systematically studied. In this paper, the finite element software ANSYS workbench is first used to simulate the thermal residual stress of the diamond films on the tungsten surface, and the influence of the films thickness on the size and distribution of the thermal residual stress is studied, and the optimal deposition thickness range of the diamond films is confirmed. High-performance first wall materials are particularly important for the operation of fusion reactors. The finite element simulation results obtained the diamond films thickness range with low thermal residual stress value. The diamond films was prepared on the surface of the tungsten pipe through the microwave plasma chemical vapor deposition (MPCVD) method to match the thickness of the simulation result. The total stress of the films and the adhesion to the substrate are characterized the key to investigating whether the diamond films can be applied on the surface of the first wall material is the key. A MPCVD method was used to prepare a diamond films with a thickness matching the simulation result on the surface of the tungsten pipe component. Raman spectroscopy and indentation were used to study the thickness of the films and its total stress and its correlation with the simulation results. The influence of substrate adhesion. The simulation results show that as the thickness of the diamond films increases, the maximum principal stress and maximum shear stress of the films first decrease and then increase, from 75-100 μm to the lowest, which is less than the normal fracture strength of the diamond films, and the maximum stress reduction area appears at the edge of the films. Diamond films with thicknesses of (55.48±0.5), (80.86±0.5), (103.56±0.5) μm, and (123.84±0.5) μm were prepared on the surface of the substrate by the MPCVD method. Through Raman characterization, the first-order characteristic peaks of the four samples were all lower than 1 332 cm–1, the surface has tensile stress. At the same time, among the Raman peak positions of the four collection points of the diamond films with a films thickness of (103.56 ±0.5) μm, the Raman peak position in the middle region of the films is 1 331.75 cm–1, which is closer to 1 332 cm–1, which is substituted into the Raman stress formula. The tensile stress is 141.75 MPa, and the maximum tensile stress at the corresponding corners is 635.04 MPa, so excessively high tensile stress at the corners will cause cracks to appear. The center positions of the four thickness diamond films were indented by Rockwell hardness tester. It can be seen that the indentation test results and the Raman spectrum characterization results are mutually verified. Therefore, the diamond films with a thickness of (103.56±0.5) μm is not easy to be damaged, showing the best performance. Comparing with the VDI3198 standard, the indentation pits can reach the HF1 and HF2 level, indicating that the diamond films with a thickness of (103.56±0.5) μm has a high adhesion to the substrate, which provides a theoretical basis for the application of the diamond films on the surface of the first wall material.
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