钟利,金凡亚,但敏,童洪辉,敬星,王新超,许泽金.表面处理对PEEK GF30磁控溅射镀Cu金属化的影响[J].表面技术,2022,51(7):297-305.
ZHONG Li,JIN Fan-ya,DAN Min,TONG Hong-hui,JING Xing,WANG Xin-chao,XU Ze-jin.Effect of Surface Treatment on Cu Metallization by Magnetron Sputtering of PEEK GF30[J].Surface Technology,2022,51(7):297-305
表面处理对PEEK GF30磁控溅射镀Cu金属化的影响
Effect of Surface Treatment on Cu Metallization by Magnetron Sputtering of PEEK GF30
  
DOI:10.16490/j.cnki.issn.1001-3660.2022.07.029
中文关键词:  磁控溅射镀膜  表面金属化  界面处理  注入  活化  聚醚醚酮  膜基结合强度
英文关键词:magnetron sputtering coating  surface metallization  interface treatment  implantation  activation  PEEK  bond strength
基金项目:西物创新行动项目(202001XWCXYD002);国家自然科学基金(11875039);四川省应用基础研究项目(2019YJ0296)
作者单位
钟利 核工业西南物理研究院 中核同创成都科技有限公司,成都 610207 
金凡亚 核工业西南物理研究院 中核同创成都科技有限公司,成都 610207 
但敏 核工业西南物理研究院 中核同创成都科技有限公司,成都 610207 
童洪辉 核工业西南物理研究院 中核同创成都科技有限公司,成都 610207 
敬星 中国核动力研究设计院,成都 610213 
王新超 核工业西南物理研究院 中核同创成都科技有限公司,成都 610207 
许泽金 核工业西南物理研究院 中核同创成都科技有限公司,成都 610207 
AuthorInstitution
ZHONG Li Tongchuang Chengdu Technology Co.of CNNC, Southwest Institute of Physics, Chengdu 610207, China 
JIN Fan-ya Tongchuang Chengdu Technology Co.of CNNC, Southwest Institute of Physics, Chengdu 610207, China 
DAN Min Tongchuang Chengdu Technology Co.of CNNC, Southwest Institute of Physics, Chengdu 610207, China 
TONG Hong-hui Tongchuang Chengdu Technology Co.of CNNC, Southwest Institute of Physics, Chengdu 610207, China 
JING Xing Nuclear Power Institute of China, Chengdu 610213, China 
WANG Xin-chao Tongchuang Chengdu Technology Co.of CNNC, Southwest Institute of Physics, Chengdu 610207, China 
XU Ze-jin Tongchuang Chengdu Technology Co.of CNNC, Southwest Institute of Physics, Chengdu 610207, China 
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中文摘要:
      目的 赋予基材PEEK GF30良好的导电性。方法 以磁控溅射镀膜技术在表面沉积Cu膜。分别采用离子注入和等离子体活化两种技术对基材进行界面处理,通过接触角测试、红外光谱测试和界面微观形貌观察,与原始基材展开表面状态对比。再在此基础上进行金属化处理,并对3种不同界面状态下所制膜层的相结构、表面及断口形貌和成分、膜基结合强度进行判定和分析,探讨界面状态的影响因素以及对膜基结合性能的作用机理。结果 注入金属Ti后,表面Ti含量得到了有效提高,但表面润湿性能无明显改变,活化处理后表面极性基团增加、润湿性能大幅提升,为镀膜提供了良好的界面状态。在原始状态、注入和活化后3种不同界面状态下制备的Cu膜均沿Cu(225)择优生长,活化后所制膜层的结晶度最优。原始状态下所制膜层平整性欠佳、膜基交界处异种材料差异明显,涂层附着力保持为5级,结合力<0.1 N;注入后所制膜层平整致密,交界处有Ti微粒产生“锚扎”强化效果,涂层附着力保持为1级,结合力<0.1 N;活化后所制膜层规则均匀,交界处出现缓冲层,金属微粒“锚扎”强化深度和强度效果最佳,涂层附着力保持为0级,结合力提升至15.45 N。结论 金属注入能够改善膜基结合强度,但改善效果受限于注入层深度的影响。等离子体活化处理能够提高表面活性,改善基材表面环境,可有效提高膜基结合强度。
英文摘要:
      To impart good electrical conductivity to the substrate PEEK GF30, Cu films were deposited on the surface by magnetron sputtering coating technology. Metal ion implantation and plasma activation technology were used to improvement of surface properties of substrate, and the properties of the interface after interface processing were compared with those of the original substrate by contact angle testing, infrared spectroscopy and microscopic morphology observation. On this basis, we deposited copper films by magnetron sputtering method and explored the factors affecting the interfacial state and the mechanism of the effect on the bonding performance by testing and comparing the phase structure, surface morphology and composition, and the bonding strength of the films deposited on three different interfacial states. The results showed that Ti content on the surface was effectively improved after metallic ion implantation while the surface wettability did not change significantly, and surface wettability and the interfacial state was greatly improved after the activation treatment. The Cu films prepared at three different interfacial states all grew along Cu(225) selectively, and the crystallinity of the film after plasma activation treatment was optimal. The film prepared in the original state had poor flatness and interfacial connection properties, the coating adhesion was maintained at level 5 and the bonding force was <0.1 N. The film prepared after implantation was flat and dense, with Ti particles at the junction producing an "anchoring" reinforcement effect, and the adhesion of the coating was maintained at level 1, with a bonding force of <0.1 N. The film prepared after activation was regular and uniform, with a buffer layer at the junction, and the depth and strength of metal particles "anchoring" was optimal, and the coating adhesion was maintained at level 0, with a bonding force of 15.45 N. Metal ion implantation can improve the film base bonding strength, but the improvement effect is limited by the depth of the implanted layer, while plasma activation treatment can increase the surface activity and improve the surface environment of the substrate, which can effectively improve the film base bonding strength.
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