赵升升,程毓,张小波,常正凯.Si和316L基片上TiN薄膜微观结构和应力的对比分析[J].表面技术,2022,51(3):278-285.
ZHAO Sheng-sheng,CHENG Yu,ZHANG Xiao-bo,CHANG Zheng-kai.Comparative Study on Stress and Microstructure of TiN Films on Si and 316L Substrates[J].Surface Technology,2022,51(3):278-285 |
| Si和316L基片上TiN薄膜微观结构和应力的对比分析 |
| Comparative Study on Stress and Microstructure of TiN Films on Si and 316L Substrates |
| 投稿时间：2021-04-21 修订日期：2021-09-07 |
| DOI：10.16490/j.cnki.issn.1001-3660.2022.03.030 |
| 中文关键词: 基片弯曲法 应力测试 残余应力 基片初始曲率 基片材料 |
| 英文关键词:substrate curvature technique stress test residual stress substrate original curvature substrate material |
| 基金项目:深圳职业技术学院重点项目(6020310007K);深圳市基础研究项目(JCYJ20190809150001747) |
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| Author | Institution |
| ZHAO Sheng-sheng | School of Mechanical and Electrical Engineering, Shenzhen Polytechnic, Shenzhen 518055, China |
| CHENG Yu | School of Mechanical and Electrical Engineering, Shenzhen Polytechnic, Shenzhen 518055, China |
| ZHANG Xiao-bo | Shenzhen Supro Instruments Co., Ltd., Shenzhen 518000, China |
| CHANG Zheng-kai | Shenzhen Supro Instruments Co., Ltd., Shenzhen 518000, China |
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| 中文摘要: |
| 目的 比较Si和316L基片上TiN薄膜的微观结构和应力，分析基片材料和基片初始曲率对薄膜应力的影响。方法 采用电弧离子镀技术在Si基片和316L基片上制备了TiN薄膜，实测了薄膜应力，通过XRD、SEM、TEM等方法对薄膜的微观结构进行了分析。运用有限元分析技术，以结构力学为原理，分别对不同初始曲率的Si基片和316L基片上的薄膜应力测试进行了计算和校正应用。结果 相同工艺条件下，316L基片上TiN薄膜的应力比Si基片上的大。TiN薄膜应力随偏压的增大而增大。薄膜生长至近表面都形成了柱状晶结构，316L基片与TiN薄膜的膜基界面处出现较多的半共格生长结构，而Si基片的膜基界面结合以纳米晶混合为主。基片的初始曲率半径会导致薄膜应力测试产生误差，初始半径越小，引起的误差越大。结论 偏压作用下，316L基片上薄膜会产生更大的压应力。316L与TiN薄膜的膜基界面结合更好，有利于其承受更高的薄膜应力。316L基片的初始曲率半径显著小于Si基片，由此引起的薄膜应力测试误差较大，有必要对316L基片上的薄膜应力测试结果进行校正。 |
| 英文摘要: |
| TiN films on Si substrate and 316L substrate were compared to study the effects of different substrate materials and initial curvature on the film stresses. TiN films were prepared on Si and 316L substrates by arc ion plating. The film stresses was measured. The microstructures of the films were analyzed by XRD, SEM and TEM. Based on the principle of structural mechanics, The finite element analysis technique was used to calculate and correct the stress on Si substrate and 316L substrate with different initial curvature. Under the same deposition process, the stress of TiN film on 316L substrate was larger than that on Si substrate. The film stresses increase with the increase of bias voltage. The columnar crystal structure was formed near the surface of the films. There were many semi-coherent growth structures at the interface between the 316L substrate and TiN film, while nanocrystalline mixing was the main bonding at the interface of the Si substrate and TiN film. The initial radius of curvature of the substrate would cause some errors during film stress testing. The smaller the initial radius was, the greater the errors would be caused. Under the effect of bias, the films on 316L substrate would induce more compressive stress. The bond between 316L and TiN film was better, which was beneficial to bear higher film stresses. The initial radius of curvature of the 316L substrate was significantly smaller than that of the Si substrate, which caused a large error during film stress testing. It is necessary to be corrected for the stress of the films on the 316L substrate. |
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